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Toshiba Semiconductor and Storage
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Part Number
Manufacturer
Description
Unit Price
In Stock
TPH8R008NH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 8 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id : 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3000pF @ 40V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 61W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 8 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id : 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3000pF @ 40V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 61W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPH8R80ANH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 8.8 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2800pF @ 50V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 61W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 8.8 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2800pF @ 50V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 61W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
5863 in stock
TPH8R903NL,LQ
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 8.9 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 9.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 820pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 24W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 8.9 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 9.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 820pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 24W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
3439 in stock
TPHR6503PL,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 0.65 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 10000pF @ 15V
FET Feature : -
Power Dissipation (Max) : 960mW (Ta), 170W (Tc)
Operating Temperature : 175°C
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 0.65 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 10000pF @ 15V
FET Feature : -
Power Dissipation (Max) : 960mW (Ta), 170W (Tc)
Operating Temperature : 175°C
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPHR8504PL,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 0.85 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 103nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 9600pF @ 20V
FET Feature : -
Power Dissipation (Max) : 1W (Ta), 170W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 0.85 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 103nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 9600pF @ 20V
FET Feature : -
Power Dissipation (Max) : 1W (Ta), 170W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
5402 in stock
TPHR9003NL,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 0.9 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6900pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 78W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 0.9 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6900pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 78W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
12677 in stock
TPHR9203PL,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 2.1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7540pF @ 15V
FET Feature : -
Power Dissipation (Max) : 132W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 2.1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7540pF @ 15V
FET Feature : -
Power Dissipation (Max) : 132W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
6605 in stock
TPN11003NL,LQ
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 11 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 15V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 19W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 11 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 15V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 19W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
4 in stock
TPN11006NL,LQ
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 11.4 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2000pF @ 30V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 11.4 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2000pF @ 30V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
3948 in stock
TPN1110ENH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 114 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 100V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 39W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 114 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 100V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 39W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
TPN13008NH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 13.3 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 40V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 42W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 13.3 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 40V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 42W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
9861 in stock
TPN14006NH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 6.5V, 10V
Rds On (Max) @ Id, Vgs : 14 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 30V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 6.5V, 10V
Rds On (Max) @ Id, Vgs : 14 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 30V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
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