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Toshiba Semiconductor and Storage
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Part Number
Manufacturer
Description
Unit Price
In Stock
TPH1R204PL,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.24 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7200pF @ 20V
FET Feature : -
Power Dissipation (Max) : 960mW (Ta), 132W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.24 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7200pF @ 20V
FET Feature : -
Power Dissipation (Max) : 960mW (Ta), 132W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
9432 in stock
TPH1R403NL,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.4 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 46nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4400pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 64W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.4 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 46nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4400pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 64W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
5966 in stock
TPH1R712MD,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVI
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 1.7 mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 182nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 10900pF @ 10V
FET Feature : -
Power Dissipation (Max) : 78W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVI
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 1.7 mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 182nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 10900pF @ 10V
FET Feature : -
Power Dissipation (Max) : 78W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
4880 in stock
TPH2010FNH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 198 mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 100V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 42W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 198 mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 100V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 42W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPH2900ENH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 33A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 29 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2200pF @ 100V
FET Feature : -
Power Dissipation (Max) : 78W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 33A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 29 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2200pF @ 100V
FET Feature : -
Power Dissipation (Max) : 78W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPH2R306NH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6.5V, 10V
Rds On (Max) @ Id, Vgs : 2.3 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 72nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6100pF @ 30V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 78W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6.5V, 10V
Rds On (Max) @ Id, Vgs : 2.3 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 72nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6100pF @ 30V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 78W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
5667 in stock
TPH2R506PL,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id : 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5435pF @ 30V
FET Feature : -
Power Dissipation (Max) : 132W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id : 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5435pF @ 30V
FET Feature : -
Power Dissipation (Max) : 132W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
11508 in stock
TPH2R608NH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 75V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.6 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 72nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6000pF @ 37.5V
FET Feature : -
Power Dissipation (Max) : 142W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 75V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.6 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 72nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6000pF @ 37.5V
FET Feature : -
Power Dissipation (Max) : 142W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPH3300CNH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 33 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 10.6nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1100pF @ 75V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 57W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 33 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 10.6nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1100pF @ 75V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 57W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPH3R003PL,LQ
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 44A, 4.5V
Vgs(th) (Max) @ Id : 2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3825pF @ 15V
FET Feature : -
Power Dissipation (Max) : 90W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 44A, 4.5V
Vgs(th) (Max) @ Id : 2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3825pF @ 15V
FET Feature : -
Power Dissipation (Max) : 90W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
5616 in stock
TPH3R203NL,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 21nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2100pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 44W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 21nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2100pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 44W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
5979 in stock
TPH3R704PL,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.7 mOhm @ 46A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 0.2mA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2500pF @ 20V
FET Feature : -
Power Dissipation (Max) : 960mW (Ta), 81W (Tc)
Operating Temperature : 175°C
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.7 mOhm @ 46A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 0.2mA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2500pF @ 20V
FET Feature : -
Power Dissipation (Max) : 960mW (Ta), 81W (Tc)
Operating Temperature : 175°C
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
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