Welcome to Weijie Semiconductor
Toshiba Semiconductor and Storage
- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
Image
Part Number
Manufacturer
Description
Unit Price
In Stock
TPCP8103-H(TE85LFM
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSIII-H
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 40 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 10V
FET Feature : -
Power Dissipation (Max) : 840mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PS-8 (2.9x2.4)
Package / Case : 8-SMD, Flat Lead
Packaging : Tape & Reel (TR)
Series : U-MOSIII-H
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 40 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 10V
FET Feature : -
Power Dissipation (Max) : 840mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PS-8 (2.9x2.4)
Package / Case : 8-SMD, Flat Lead
0
100 in stock
TPCP8203(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 4.7A
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 360mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : PS-8 (2.9x2.4)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 4.7A
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 360mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : PS-8 (2.9x2.4)
0
100 in stock
TPCP8401(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V, 12V
Current - Continuous Drain (Id) @ 25°C : 100mA, 5.5A
Rds On (Max) @ Id, Vgs : 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 9.3pF @ 3V
Power - Max : 1W
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : PS-8 (2.9x2.4)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V, 12V
Current - Continuous Drain (Id) @ 25°C : 100mA, 5.5A
Rds On (Max) @ Id, Vgs : 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 9.3pF @ 3V
Power - Max : 1W
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : PS-8 (2.9x2.4)
0
100 in stock
TPD4207F,FQ
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Motor Type - Stepper : -
Motor Type - AC, DC : Brushless DC (BLDC)
Function : Driver - Fully Integrated, Control and Power Stage
Output Configuration : Half Bridge (3)
Interface : Parallel
Technology : Power MOSFET
Step Resolution : -
Applications : General Purpose
Current - Output : 5A
Voltage - Supply : 13.5 V ~ 16.5 V
Voltage - Load : 50 V ~ 450 V
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 30-SOP (0.433", 11.00mm Width)
Supplier Device Package : 30-SOP
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Motor Type - Stepper : -
Motor Type - AC, DC : Brushless DC (BLDC)
Function : Driver - Fully Integrated, Control and Power Stage
Output Configuration : Half Bridge (3)
Interface : Parallel
Technology : Power MOSFET
Step Resolution : -
Applications : General Purpose
Current - Output : 5A
Voltage - Supply : 13.5 V ~ 16.5 V
Voltage - Load : 50 V ~ 450 V
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 30-SOP (0.433", 11.00mm Width)
Supplier Device Package : 30-SOP
0
1966 in stock
TPH11003NL,LQ
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 11 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 21W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 11 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 21W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
3272 in stock
TPH11006NL,LQ
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 11.4 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2000pF @ 30V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 34W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 11.4 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2000pF @ 30V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 34W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
2621 in stock
TPH1110ENH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 114 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 100V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 42W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 114 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 100V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 42W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPH1110FNH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 112 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1100pF @ 100V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 57W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 112 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1100pF @ 100V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 57W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPH12008NH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 12.3 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 40V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 48W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 12.3 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 40V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 48W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPH14006NH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 6.5V, 10V
Rds On (Max) @ Id, Vgs : 14 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 30V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 32W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 6.5V, 10V
Rds On (Max) @ Id, Vgs : 14 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 30V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 32W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
9760 in stock
TPH1400ANH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 13.6 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 50V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 48W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 13.6 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 50V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 48W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
4460 in stock
TPH1R005PL,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 45V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.04 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 99nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 9600pF @ 22.5V
FET Feature : -
Power Dissipation (Max) : 960mW (Ta), 170W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 45V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.04 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 99nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 9600pF @ 22.5V
FET Feature : -
Power Dissipation (Max) : 960mW (Ta), 170W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
52 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
Contact Weijie
- sales@ynnelec.com
- jay@ynnelec.com
- 1132 Nanguang Jiejia Building, No. 3037 Shennan Middle Road, Futian District, Shenzhen
Customer service
Copyright © 2025 Ynnelec. All rights reserved.
webdesign www.wzdzkf.com
Powered by www.wzdzkf.com