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Toshiba Semiconductor and Storage
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Part Number
Manufacturer
Description
Unit Price
In Stock
TPCC8006-H(TE12LQM
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSVI-H
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 8 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2200pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 27W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : U-MOSVI-H
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 8 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2200pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 27W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
.jpg "Show details for TPCC8008(TE12L,QM)")
TPCC8008(TE12L,QM)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIV
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.8 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1A
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIV
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.8 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1A
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
537 in stock
TPCC8009,LQ(O
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSIV
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 7 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 26nC @ 10V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1270pF @ 10V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : U-MOSIV
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 7 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 26nC @ 10V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1270pF @ 10V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
TPCC8065-H,LQ(S
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSVII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 11.4 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 18W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : U-MOSVII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 11.4 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 18W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
TPCC8066-H,LQ(S
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSVII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 15 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1100pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 17W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : U-MOSVII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 15 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1100pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 17W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
TPCC8067-H,LQ(S
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSVII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 9.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 690pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 15W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : U-MOSVII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 9.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 690pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 15W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
.jpg "Show details for TPCC8103(TE12L,QM)")
TPCC8103(TE12L,QM)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : U-MOSV
Part Status : Discontinued at
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 12 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 27W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Series : U-MOSV
Part Status : Discontinued at
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 12 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 27W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
2187 in stock
TPCC8A01-H(TE12LQM
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSV-H
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 9.9 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : U-MOSV-H
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 9.9 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
TPCF8101(TE85L,F,M
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : U-MOSIII
Part Status : Discontinued at
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 28 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-8 (2.9x1.5)
Package / Case : 8-SMD, Flat Lead
Packaging : Cut Tape (CT)
Series : U-MOSIII
Part Status : Discontinued at
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 28 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-8 (2.9x1.5)
Package / Case : 8-SMD, Flat Lead
0
100 in stock
TPCF8102(TE85L,F,M
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSIII
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 30 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 19nC @ 5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 1550pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-8 (2.9x1.5)
Package / Case : 8-SMD, Flat Lead
Packaging : Tape & Reel (TR)
Series : U-MOSIII
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 30 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 19nC @ 5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 1550pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-8 (2.9x1.5)
Package / Case : 8-SMD, Flat Lead
0
100 in stock
TPCF8104(TE85L,F,M
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : U-MOSIV
Part Status : Discontinued at
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 28 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1760pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-8 (2.9x1.5)
Package / Case : 8-SMD, Flat Lead
Packaging : Cut Tape (CT)
Series : U-MOSIV
Part Status : Discontinued at
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 28 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1760pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-8 (2.9x1.5)
Package / Case : 8-SMD, Flat Lead
0
100 in stock
TPCF8107,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : U-MOSVI
Part Status : Discontinued at
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 28 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (Max) : +20V, -25V
Input Capacitance (Ciss) (Max) @ Vds : 970pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-8 (2.9x1.5)
Package / Case : 8-SMD, Flat Lead
Packaging : Cut Tape (CT)
Series : U-MOSVI
Part Status : Discontinued at
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 28 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (Max) : +20V, -25V
Input Capacitance (Ciss) (Max) @ Vds : 970pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-8 (2.9x1.5)
Package / Case : 8-SMD, Flat Lead
0
100 in stock
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