Toshiba Semiconductor and Storage

- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

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Part Number

Manufacturer

Description

Unit Price

In Stock

Picture of TPCF8201(TE85L,F,M

TPCF8201(TE85L,F,M

Toshiba Semiconductor and Storage

Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 3A
Rds On (Max) @ Id, Vgs : 49 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 590pF @ 10V
Power - Max : 330mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : VS-8 (2.9x1.5)

0

100 in stock

Picture of TPCF8304(TE85L,F,M

TPCF8304(TE85L,F,M

Toshiba Semiconductor and Storage

Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.2A
Rds On (Max) @ Id, Vgs : 72 mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id : 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
Power - Max : 330mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : VS-8 (2.9x1.5)

0

100 in stock

Picture of TPCF8402(TE85L,F,M

TPCF8402(TE85L,F,M

Toshiba Semiconductor and Storage

Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A, 3.2A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 470pF @ 10V
Power - Max : 330mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : VS-8 (2.9x1.5)

0

100 in stock

Picture of TPCF8A01(TE85L)

TPCF8A01(TE85L)

Toshiba Semiconductor and Storage

Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSIII
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2V, 4.5V
Rds On (Max) @ Id, Vgs : 49 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 590pF @ 10V
FET Feature : Schottky Diode (Isolated)
Power Dissipation (Max) : 330mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-8 (2.9x1.5)
Package / Case : 8-SMD, Flat Lead

0

100 in stock

Picture of TPCF8B01(TE85L,F,M

TPCF8B01(TE85L,F,M

Toshiba Semiconductor and Storage

Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSIII
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 110 mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 6nC @ 5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 470pF @ 10V
FET Feature : Schottky Diode (Isolated)
Power Dissipation (Max) : 330mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-8 (2.9x1.5)
Package / Case : 8-SMD, Flat Lead

0

100 in stock

Picture of TPCL4201(TE85L,F)

TPCL4201(TE85L,F)

Toshiba Semiconductor and Storage

Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 10V
Power - Max : 500mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 4-XFLGA
Supplier Device Package : 4-Chip LGA (1.59x1.59)

0

100 in stock

Picture of TPCL4202(TE85L,F)

TPCL4202(TE85L,F)

Toshiba Semiconductor and Storage

Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 10V
Power - Max : 500mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 4-XFLGA
Supplier Device Package : 4-Chip LGA (1.59x1.59)

0

100 in stock

Picture of TPCL4203(TE85L,F)

TPCL4203(TE85L,F)

Toshiba Semiconductor and Storage

Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 685pF @ 10V
Power - Max : 500mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 4-XFLGA
Supplier Device Package : 4-Chip LGA (1.59x1.59)

0

100 in stock

Picture of TPCP8001-H(TE85LFM

TPCP8001-H(TE85LFM

Toshiba Semiconductor and Storage

Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSIII
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 640pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1W (Ta), 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PS-8 (2.9x2.4)
Package / Case : 8-SMD, Flat Lead

0

100 in stock

Picture of TPCP8003-H(TE85L,F

TPCP8003-H(TE85L,F

Toshiba Semiconductor and Storage

Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSIII-H
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 180 mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 360pF @ 10V
FET Feature : -
Power Dissipation (Max) : 840mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PS-8 (2.9x2.4)
Package / Case : 8-SMD, Flat Lead

0

100 in stock

Picture of TPCP8004(TE85L,F)

TPCP8004(TE85L,F)

Toshiba Semiconductor and Storage

Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSIV
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 8.5 mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 26nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1270pF @ 10V
FET Feature : -
Power Dissipation (Max) : 840mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PS-8 (2.9x2.4)
Package / Case : 8-SMD, Flat Lead

0

100 in stock

Picture of TPCP8005-H(TE85L,F

TPCP8005-H(TE85L,F

Toshiba Semiconductor and Storage

Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSV-H
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 12.9 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2150pF @ 10V
FET Feature : -
Power Dissipation (Max) : 840mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PS-8 (2.9x2.4)
Package / Case : 8-SMD, Flat Lead

0

100 in stock