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Toshiba Semiconductor and Storage

- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

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Part Number
Manufacturer
Description
Unit Price
In Stock

ULN2004AFWG,N,E ULN2004AFWG,N,E

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : 7 NPN Darlington
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max) : 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
Power - Max : 1.25W
Frequency - Transition : -
Operating Temperature : -40°C ~ 85°C (TA)
Mounting Type : -
Package / Case : 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 16-SOL
0
877 in stock

ULN2004APG,C,N ULN2004APG,C,N

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Obsolete
Transistor Type : 7 NPN Darlington
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max) : 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
Power - Max : 1.47W
Frequency - Transition : -
Operating Temperature : -40°C ~ 85°C (TA)
Mounting Type : -
Package / Case : 16-DIP (0.300", 7.62mm)
Supplier Device Package : 16-DIP
0
100 in stock

ULN2803AFWG,C,EL ULN2803AFWG,C,EL

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 8 NPN Darlington
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
Power - Max : 1.31W
Frequency - Transition : -
Operating Temperature : -40°C ~ 85°C (TA)
Mounting Type : Surface Mount
Package / Case : 18-SOIC (0.295", 7.50mm Width)
Supplier Device Package : 18-SOL
0
100 in stock

ULN2803APG,CN ULN2803APG,CN

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Obsolete
Transistor Type : 8 NPN Darlington
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
Power - Max : 1.47W
Frequency - Transition : -
Operating Temperature : -40°C ~ 85°C (TA)
Mounting Type : Through Hole
Package / Case : 18-DIP (0.300", 7.62mm)
Supplier Device Package : 18-DIP
0
100 in stock