Toshiba Semiconductor and Storage
- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
Image
Part Number
Manufacturer
Description
Unit Price
In Stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 46A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 58nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5200pF @ 50V
FET Feature : -
Power Dissipation (Max) : 800mW (Ta), 142W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-DSOP Advance
Package / Case : 8-PowerVDFN
0
4840 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 0.8 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 103nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 9600pF @ 20V
FET Feature : -
Power Dissipation (Max) : 1W (Ta), 170W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-DSOP Advance
Package / Case : 8-PowerVDFN
0
2567 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 0.85 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6900pF @ 15V
FET Feature : -
Power Dissipation (Max) : 800mW (Ta), 142W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-DSOP Advance
Package / Case : 8-PowerVDFN
0
4926 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 10A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 10A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 90µA @ 650V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220-2L
Operating Temperature - Junction : 175°C (Max)
0
34 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 12A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 12A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 90µA @ 170V
Capacitance @ Vr, F : 65pF @ 650V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220-2L
Operating Temperature - Junction : 175°C (Max)
0
30 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Active
Diode Configuration : 1 Pair Common Cathode
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) (per Diode) : 10A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 10A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 90µA @ 650V
Operating Temperature - Junction : 175°C (Max)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
0
128 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : -
Part Status : Active
Transistor Type : PNP
Current - Collector (Ic) (Max) : 1.5A
Voltage - Collector Emitter Breakdown (Max) : 160V
Vce Saturation (Max) @ Ib, Ic : 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 140 @ 100mA, 5V
Power - Max : 10W
Frequency - Transition : 100MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-225AA, TO-126-3
Supplier Device Package : TO-126N
0
2316 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Active
Transistor Type : PNP
Current - Collector (Ic) (Max) : 15A
Voltage - Collector Emitter Breakdown (Max) : 230V
Vce Saturation (Max) @ Ib, Ic : 3V @ 800mA, 8A
Current - Collector Cutoff (Max) : 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 1A, 5V
Power - Max : 150W
Frequency - Transition : 30MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3PL
Supplier Device Package : TO-3P(L)
0
16 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 1.5A
Voltage - Collector Emitter Breakdown (Max) : 160V
Vce Saturation (Max) @ Ib, Ic : 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 140 @ 100mA, 5V
Power - Max : 10W
Frequency - Transition : 100MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-225AA, TO-126-3
Supplier Device Package : TO-126N
0
6510 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 15A
Voltage - Collector Emitter Breakdown (Max) : 230V
Vce Saturation (Max) @ Ib, Ic : 3V @ 800mA, 8A
Current - Collector Cutoff (Max) : 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 1A, 5V
Power - Max : 150W
Frequency - Transition : 30MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3PL
Supplier Device Package : TO-3P(L)
0
90 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : 7 NPN Darlington
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max) : 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
Power - Max : 1.25W
Frequency - Transition : -
Operating Temperature : -40°C ~ 85°C (TA)
Mounting Type : -
Package / Case : 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 16-SOL
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Obsolete
Transistor Type : 7 NPN Darlington
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max) : 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
Power - Max : 1.47W
Frequency - Transition : -
Operating Temperature : -40°C ~ 85°C (TA)
Mounting Type : -
Package / Case : 16-DIP (0.300", 7.62mm)
Supplier Device Package : 16-DIP
0
100 in stock
.jpg "Show details for TTA1943(Q)")
.jpg "Show details for TTC5200(Q)")
New Original Stock
Competitive Prices
One-stop
Customer Service
