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Toshiba Semiconductor and Storage
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Part Number
Manufacturer
Description
Unit Price
In Stock
TPN4R303NL,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 14.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 15V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 34W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 14.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 15V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 34W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
11375 in stock
TPN4R712MD,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVI
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 4.7 mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 65nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 4300pF @ 10V
FET Feature : -
Power Dissipation (Max) : 42W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVI
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 4.7 mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 65nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 4300pF @ 10V
FET Feature : -
Power Dissipation (Max) : 42W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
15655 in stock
TPN5900CNH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 59 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 75V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 39W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 59 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 75V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 39W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
TPN6R003NL,LQ
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6 mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 15V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 32W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6 mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 15V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 32W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
TPN6R303NC,LQ
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 24nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1370pF @ 15V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 19W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 24nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1370pF @ 15V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 19W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
100 in stock
TPN7R506NH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6.5V, 10V
Rds On (Max) @ Id, Vgs : 7.5 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 30V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 42W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6.5V, 10V
Rds On (Max) @ Id, Vgs : 7.5 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 30V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 42W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
6802 in stock
TPN8R903NL,LQ
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 8.9 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 9.8nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 820pF @ 15V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 22W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 8.9 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 9.8nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 820pF @ 15V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 22W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
0
3054 in stock
TPS850
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Type : Ambient
Wavelength : 640nm
Proximity Detection : No
Output Type : Current
Voltage - Supply : 2.7 V ~ 5.5 V
Operating Temperature : -30°C ~ 85°C
Mounting Type : Surface Mount
Package / Case : 1210 (3225 Metric), 4 Leads
Supplier Device Package : -
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Type : Ambient
Wavelength : 640nm
Proximity Detection : No
Output Type : Current
Voltage - Supply : 2.7 V ~ 5.5 V
Operating Temperature : -30°C ~ 85°C
Mounting Type : Surface Mount
Package / Case : 1210 (3225 Metric), 4 Leads
Supplier Device Package : -
0
100 in stock
TPS853
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Type : Ambient
Wavelength : 600nm
Proximity Detection : No
Output Type : Current
Voltage - Supply : 2.2 V ~ 5.5 V
Operating Temperature : -30°C ~ 85°C
Mounting Type : Surface Mount
Package / Case : 6-SMD (5 Leads), Flat Lead
Supplier Device Package : SMD (2.1 L x 2.0 W x 0.7 H)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Type : Ambient
Wavelength : 600nm
Proximity Detection : No
Output Type : Current
Voltage - Supply : 2.2 V ~ 5.5 V
Operating Temperature : -30°C ~ 85°C
Mounting Type : Surface Mount
Package / Case : 6-SMD (5 Leads), Flat Lead
Supplier Device Package : SMD (2.1 L x 2.0 W x 0.7 H)
0
100 in stock
TPW1R005PL,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 45V
Current - Continuous Drain (Id) @ 25°C : 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 122nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 9600pF @ 22.5V
FET Feature : -
Power Dissipation (Max) : 960mW (Ta), 170W (Tc)
Operating Temperature : 175°C
Mounting Type : Surface Mount
Supplier Device Package : 8-DSOP Advance
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 45V
Current - Continuous Drain (Id) @ 25°C : 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 122nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 9600pF @ 22.5V
FET Feature : -
Power Dissipation (Max) : 960mW (Ta), 170W (Tc)
Operating Temperature : 175°C
Mounting Type : Surface Mount
Supplier Device Package : 8-DSOP Advance
Package / Case : 8-PowerVDFN
0
3146 in stock
TPW1R306PL,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.29 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 91nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 8100pF @ 30V
FET Feature : -
Power Dissipation (Max) : 960mW (Ta), 170W (Tc)
Operating Temperature : 175°C
Mounting Type : Surface Mount
Supplier Device Package : 8-DSOP Advance
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.29 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 91nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 8100pF @ 30V
FET Feature : -
Power Dissipation (Max) : 960mW (Ta), 170W (Tc)
Operating Temperature : 175°C
Mounting Type : Surface Mount
Supplier Device Package : 8-DSOP Advance
Package / Case : 8-PowerVDFN
0
100 in stock
TPW4R008NH,L1Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 59nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5300pF @ 40V
FET Feature : -
Power Dissipation (Max) : 800mW (Ta), 142W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-DSOP Advance
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 59nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5300pF @ 40V
FET Feature : -
Power Dissipation (Max) : 800mW (Ta), 142W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-DSOP Advance
Package / Case : 8-PowerVDFN
0
11552 in stock
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