Toshiba Semiconductor and Storage
- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
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Part Number
Manufacturer
Description
Unit Price
In Stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 2 PNP (Dual) Matched Pair, Common Emitter
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package : USV
0
3384 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 2 PNP (Dual) Matched Pair, Common Emitter
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package : USV
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Active
Transistor Type : PNP
Current - Collector (Ic) (Max) : 15A
Voltage - Collector Emitter Breakdown (Max) : 230V
Vce Saturation (Max) @ Ib, Ic : 3V @ 800mA, 8A
Current - Collector Cutoff (Max) : 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 1A, 5V
Power - Max : 150W
Frequency - Transition : 30MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3P-3, SC-65-3
Supplier Device Package : TO-3P(N)
0
332 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Active
Transistor Type : PNP
Current - Collector (Ic) (Max) : 15A
Voltage - Collector Emitter Breakdown (Max) : 230V
Vce Saturation (Max) @ Ib, Ic : 3V @ 800mA, 8A
Current - Collector Cutoff (Max) : 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 1A, 5V
Power - Max : 150W
Frequency - Transition : 30MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3PL
Supplier Device Package : TO-3P(L)
0
551 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
Transistor Type : PNP
Current - Collector (Ic) (Max) : 400mA
Voltage - Collector Emitter Breakdown (Max) : 12V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 10mA, 2V
Power - Max : 100mW
Frequency - Transition : 130MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
0
8000 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
Transistor Type : PNP
Current - Collector (Ic) (Max) : 400mA
Voltage - Collector Emitter Breakdown (Max) : 12V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 10mA, 2V
Power - Max : 100mW
Frequency - Transition : 130MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-723
Supplier Device Package : VESM
0
8000 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Active
Transistor Type : PNP
Current - Collector (Ic) (Max) : 15A
Voltage - Collector Emitter Breakdown (Max) : 230V
Vce Saturation (Max) @ Ib, Ic : 3V @ 800mA, 8A
Current - Collector Cutoff (Max) : 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 1A, 5V
Power - Max : 130W
Frequency - Transition : 30MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3P-3, SC-65-3
Supplier Device Package : TO-3P(N)
0
158 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 80MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
0
7758 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP
Current - Collector (Ic) (Max) : 3A
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max) : 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 500mA, 5V
Power - Max : 1W
Frequency - Transition : 9MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : PW-MOLD
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
10453 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
72518 in stock
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