Toshiba Semiconductor and Storage
- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
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Part Number
Manufacturer
Description
Unit Price
In Stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 120V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 350 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 100MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 120V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 100MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
0
237 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 30V
Frequency - Transition : 550MHz
Noise Figure (dB Typ @ f) : 2.5dB @ 100MHz
Gain : 23dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 1mA, 6V
Current - Collector (Ic) (Max) : 20mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
1553 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 30V
Frequency - Transition : 550MHz
Noise Figure (dB Typ @ f) : 2.5dB @ 100MHz
Gain : 23dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 6V
Current - Collector (Ic) (Max) : 20mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
Transistor Type : NPN
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 200V
Vce Saturation (Max) @ Ib, Ic : 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10mA, 3V
Power - Max : 150mW
Frequency - Transition : 100MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 800mA
Voltage - Collector Emitter Breakdown (Max) : 25V
Vce Saturation (Max) @ Ib, Ic : 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 100mA, 1V
Power - Max : 200mW
Frequency - Transition : 120MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
0
1816 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Not For New Designs
Transistor Type : NPN
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 120V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 350 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 100MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 100mA, 1V
Power - Max : 200mW
Frequency - Transition : 300MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
595 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 100mA, 1V
Power - Max : 200mW
Frequency - Transition : 300MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
18502 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 300mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 4mA, 2V
Power - Max : 150mW
Frequency - Transition : 30MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
0
124611 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 300mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 350 @ 4mA, 2V
Power - Max : 150mW
Frequency - Transition : 30MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 350 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
0
6 in stock
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