Toshiba Semiconductor and Storage
- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
Image
Part Number
Manufacturer
Description
Unit Price
In Stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Capacitance @ Vr, F : 7.1pF @ 4V, 1MHz
Capacitance Ratio : 4.3
Capacitance Ratio Condition : C1/C4
Voltage - Peak Reverse (Max) : 10V
Diode Type : Single
Q @ Vr, F : -
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-79, SOD-523
Supplier Device Package : ESC
0
101224 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Capacitance @ Vr, F : 12pF @ 4V, 1MHz
Capacitance Ratio : 4.3
Capacitance Ratio Condition : C1/C4
Voltage - Peak Reverse (Max) : 10V
Diode Type : Single
Q @ Vr, F : -
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-76, SOD-323
Supplier Device Package : USC
0
1850 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Capacitance @ Vr, F : 12pF @ 4V, 1MHz
Capacitance Ratio : 4.3
Capacitance Ratio Condition : C1/C4
Voltage - Peak Reverse (Max) : 10V
Diode Type : Single
Q @ Vr, F : -
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-79, SOD-523
Supplier Device Package : ESC
0
2587 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
26840 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
2199 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 120V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 350 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 100MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
1809 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Active
Transistor Type : PNP
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 120V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 100MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
1378 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : PNP
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 30V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 100mA, 1V
Power - Max : 150mW
Frequency - Transition : 200MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
596 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP
Current - Collector (Ic) (Max) : 800mA
Voltage - Collector Emitter Breakdown (Max) : 25V
Vce Saturation (Max) @ Ib, Ic : 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 100mA, 1V
Power - Max : 200mW
Frequency - Transition : 120MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
2460 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : PNP
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 120V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 100MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Not For New Designs
Transistor Type : PNP
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 100mA, 1V
Power - Max : 200mW
Frequency - Transition : 200MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
6000 in stock
.jpg "Show details for 2SA1313-O(TE85L,F)")
New Original Stock
Competitive Prices
One-stop
Customer Service
