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Toshiba Semiconductor and Storage
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Part Number
Manufacturer
Description
Unit Price
In Stock
TPC8A05-H(TE12L,QM
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSV-H
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 13.3 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1700pF @ 10V
FET Feature : Schottky Diode (Body)
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP (5.5x6.0)
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Packaging : Tape & Reel (TR)
Series : U-MOSV-H
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 13.3 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1700pF @ 10V
FET Feature : Schottky Diode (Body)
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP (5.5x6.0)
Package / Case : 8-SOIC (0.173", 4.40mm Width)
0
100 in stock
.jpg "Show details for TPC8A06-H(TE12LQM)")
TPC8A06-H(TE12LQM)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 10.1 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 10V
FET Feature : Schottky Diode (Body)
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP (5.5x6.0)
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 10.1 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 10V
FET Feature : Schottky Diode (Body)
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP (5.5x6.0)
Package / Case : 8-SOIC (0.173", 4.40mm Width)
0
100 in stock
TPCA8003-H(TE12LQM
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.6 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1465pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.6 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1465pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPCA8005-H(TE12LQM
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 27A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 9 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 24nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1395pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 27A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 9 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 24nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1395pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPCA8007-H(TE12L,Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 47 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1000pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Cut Tape (CT)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 47 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1000pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPCA8008-H(TE12L,Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 580 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 580 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPCA8008-H(TE12LQM
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 580 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 580 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPCA8009-H(TE12L,Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 350 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 350 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPCA8010-H(TE12L,Q
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : 蟺-MOSV
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 450 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : 蟺-MOSV
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 450 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPCA8010-H(TE12LQM
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : 蟺-MOSV
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 450 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : 蟺-MOSV
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 450 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPCA8011-H(TE12LQM
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSIII-H
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 3.5 mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id : 1.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 32nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 2900pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : U-MOSIII-H
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 3.5 mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id : 1.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 32nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 2900pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
TPCA8012-H(TE12LQM
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.9 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3713pF @ 10V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.9 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3713pF @ 10V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN
0
100 in stock
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