Welcome to Weijie Semiconductor
- Discrete Semiconductor Products
- Transistors - FETs, MOSFETs - Arrays
Image
Part Number
Manufacturer
Description
Unit Price
In Stock
IRF9952TR
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A, 2.3A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A, 2.3A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9952TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A, 2.3A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A, 2.3A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
8087 in stock
IRF9953
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 2.3A
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 2.3A
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9953PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 2.3A
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 2.3A
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9953TR
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 2.3A
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 2.3A
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9953TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 2.3A
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 2.3A
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
2758 in stock
IRF9956
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9956PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9956TR
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRFH4251DTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : FASTIRFET™
Part Status : Not For New Designs
FET Type : 2 N-Channel (Dual), Schottky
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 64A, 188A
Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1314pF @ 13V
Power - Max : 31W, 63W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerVDFN
Supplier Device Package : PQFN (5x6)
Packaging : Tape & Reel (TR)
Series : FASTIRFET™
Part Status : Not For New Designs
FET Type : 2 N-Channel (Dual), Schottky
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 64A, 188A
Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1314pF @ 13V
Power - Max : 31W, 63W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerVDFN
Supplier Device Package : PQFN (5x6)
0
100 in stock
IRFH4253DTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : HEXFET®
Part Status : Not For New Designs
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 64A, 145A
Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1314pF @ 13V
Power - Max : 31W, 50W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerVDFN
Supplier Device Package : PQFN (5x6)
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : HEXFET®
Part Status : Not For New Designs
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 64A, 145A
Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1314pF @ 13V
Power - Max : 31W, 50W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerVDFN
Supplier Device Package : PQFN (5x6)
0
4000 in stock
IRFH4255DTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 64A, 105A
Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1314pF @ 13V
Power - Max : 31W, 38W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerVDFN
Supplier Device Package : PQFN (5x6)
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 64A, 105A
Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1314pF @ 13V
Power - Max : 31W, 38W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerVDFN
Supplier Device Package : PQFN (5x6)
0
100 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
Contact Weijie
- sales@ynnelec.com
- jay@ynnelec.com
- 1132 Nanguang Jiejia Building, No. 3037 Shennan Middle Road, Futian District, Shenzhen
Customer service
Copyright © 2025 Ynnelec. All rights reserved.
webdesign www.wzdzkf.com
Powered by www.wzdzkf.com