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Part Number
Manufacturer
Description
Unit Price
In Stock
IRF8513PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8A, 11A
Rds On (Max) @ Id, Vgs : 15.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 766pF @ 15V
Power - Max : 1.5W, 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8A, 11A
Rds On (Max) @ Id, Vgs : 15.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 766pF @ 15V
Power - Max : 1.5W, 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF8513TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8A, 11A
Rds On (Max) @ Id, Vgs : 15.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 766pF @ 15V
Power - Max : 1.5W, 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8A, 11A
Rds On (Max) @ Id, Vgs : 15.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 766pF @ 15V
Power - Max : 1.5W, 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF8852TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 7.8A
Rds On (Max) @ Id, Vgs : 11.3 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id : 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1151pF @ 20V
Power - Max : 1W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package : 8-TSSOP
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 7.8A
Rds On (Max) @ Id, Vgs : 11.3 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id : 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1151pF @ 20V
Power - Max : 1W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package : 8-TSSOP
0
100 in stock
IRF8910GPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 960pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 960pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF8910GTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 960pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 960pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF8910PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 960pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 960pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF8910TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 960pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 960pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
363 in stock
IRF8915
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 8.9A
Rds On (Max) @ Id, Vgs : 18.3 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 8.9A
Rds On (Max) @ Id, Vgs : 18.3 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF8915TR
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 8.9A
Rds On (Max) @ Id, Vgs : 18.3 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 8.9A
Rds On (Max) @ Id, Vgs : 18.3 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF8915TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 8.9A
Rds On (Max) @ Id, Vgs : 18.3 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 8.9A
Rds On (Max) @ Id, Vgs : 18.3 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
7909 in stock
IRF9358PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 9.2A
Rds On (Max) @ Id, Vgs : 16.3 mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1740pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 9.2A
Rds On (Max) @ Id, Vgs : 16.3 mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1740pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9358TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 9.2A
Rds On (Max) @ Id, Vgs : 16.3 mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1740pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 9.2A
Rds On (Max) @ Id, Vgs : 16.3 mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1740pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
8800 in stock
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