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Part Number
Manufacturer
Description
Unit Price
In Stock
IRF9362PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9362TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9389PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6.8A, 4.6A
Rds On (Max) @ Id, Vgs : 27 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 398pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6.8A, 4.6A
Rds On (Max) @ Id, Vgs : 27 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 398pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9389TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6.8A, 4.6A
Rds On (Max) @ Id, Vgs : 27 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 398pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6.8A, 4.6A
Rds On (Max) @ Id, Vgs : 27 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 398pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9395MTR1PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 14A
Rds On (Max) @ Id, Vgs : 7 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs : 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 3241pF @ 15V
Power - Max : 2.1W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : DirectFET™Isometric MC
Supplier Device Package : DIRECTFET™MC
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 14A
Rds On (Max) @ Id, Vgs : 7 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs : 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 3241pF @ 15V
Power - Max : 2.1W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : DirectFET™Isometric MC
Supplier Device Package : DIRECTFET™MC
0
100 in stock
IRF9910
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A, 12A
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A, 12A
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9910PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A, 12A
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A, 12A
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9910TR
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A, 12A
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A, 12A
Rds On (Max) @ Id, Vgs : 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9910TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A, 12A
Rds On (Max) @ Id, Vgs : 9.3 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A, 12A
Rds On (Max) @ Id, Vgs : 9.3 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
2936 in stock
IRF9952
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A, 2.3A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A, 2.3A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9952PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A, 2.3A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A, 2.3A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF9952QTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A, 2.3A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.5A, 2.3A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
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