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Part Number
Manufacturer
Description
Unit Price
In Stock
IRF7304QTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4.3A
Rds On (Max) @ Id, Vgs : 90 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 610pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4.3A
Rds On (Max) @ Id, Vgs : 90 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 610pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7304TR
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4.3A
Rds On (Max) @ Id, Vgs : 90 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 610pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4.3A
Rds On (Max) @ Id, Vgs : 90 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 610pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7304TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4.3A
Rds On (Max) @ Id, Vgs : 90 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 610pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4.3A
Rds On (Max) @ Id, Vgs : 90 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 610pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
5959 in stock
IRF7306PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.6A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.6A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7306QTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.6A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.6A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7306TR
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.6A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.6A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
16000 in stock
IRF7306TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.6A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.6A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
3078 in stock
IRF7307PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.2A, 4.3A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.2A, 4.3A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7307QTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.2A, 4.3A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.2A, 4.3A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7307TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.2A, 4.3A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.2A, 4.3A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
15935 in stock
IRF7309PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A, 3A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 15V
Power - Max : 1.4W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A, 3A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 15V
Power - Max : 1.4W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7309QTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A, 3A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 15V
Power - Max : 1.4W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A, 3A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 15V
Power - Max : 1.4W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
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