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Part Number
Manufacturer
Description
Unit Price
In Stock
IRF6702M2DTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 15A
Rds On (Max) @ Id, Vgs : 6.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1380pF @ 15V
Power - Max : 2.7W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : DirectFET™Isometric MA
Supplier Device Package : DIRECTFET™MA
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 15A
Rds On (Max) @ Id, Vgs : 6.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1380pF @ 15V
Power - Max : 2.7W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : DirectFET™Isometric MA
Supplier Device Package : DIRECTFET™MA
0
100 in stock
IRF6723M2DTR1P
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 15A
Rds On (Max) @ Id, Vgs : 6.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1380pF @ 15V
Power - Max : 2.7W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : DirectFET™Isometric MA
Supplier Device Package : DIRECTFET™MA
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 15A
Rds On (Max) @ Id, Vgs : 6.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1380pF @ 15V
Power - Max : 2.7W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : DirectFET™Isometric MA
Supplier Device Package : DIRECTFET™MA
0
100 in stock
IRF6723M2DTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 15A
Rds On (Max) @ Id, Vgs : 6.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1380pF @ 15V
Power - Max : 2.7W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : DirectFET™Isometric MA
Supplier Device Package : DIRECTFET™MA
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 15A
Rds On (Max) @ Id, Vgs : 6.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1380pF @ 15V
Power - Max : 2.7W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : DirectFET™Isometric MA
Supplier Device Package : DIRECTFET™MA
0
100 in stock
IRF6802SDTR1PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 16A
Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs : 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 13V
Power - Max : 1.7W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : DirectFET™Isometric SA
Supplier Device Package : DIRECTFET™SA
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 16A
Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs : 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 13V
Power - Max : 1.7W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : DirectFET™Isometric SA
Supplier Device Package : DIRECTFET™SA
0
100 in stock
IRF7101PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 3.5A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 320pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 3.5A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 320pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7101TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 3.5A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 320pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 3.5A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 320pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
2274 in stock
IRF7102
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 2A
Rds On (Max) @ Id, Vgs : 300 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 120pF @ 25V
Power - Max : 2W
Operating Temperature : -
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 2A
Rds On (Max) @ Id, Vgs : 300 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 120pF @ 25V
Power - Max : 2W
Operating Temperature : -
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7103PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 3A
Rds On (Max) @ Id, Vgs : 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 3A
Rds On (Max) @ Id, Vgs : 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
1421 in stock
IRF7103Q
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 3A
Rds On (Max) @ Id, Vgs : 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 255pF @ 25V
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 3A
Rds On (Max) @ Id, Vgs : 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 255pF @ 25V
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7103QTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 3A
Rds On (Max) @ Id, Vgs : 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 255pF @ 25V
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 3A
Rds On (Max) @ Id, Vgs : 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 255pF @ 25V
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7103TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 3A
Rds On (Max) @ Id, Vgs : 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 3A
Rds On (Max) @ Id, Vgs : 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7104PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 2.3A
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 2.3A
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
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