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Part Number
Manufacturer
Description
Unit Price
In Stock
IRF7309TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A, 3A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 15V
Power - Max : 1.4W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A, 3A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 15V
Power - Max : 1.4W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
9679 in stock
IRF7311PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6.6A
Rds On (Max) @ Id, Vgs : 29 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6.6A
Rds On (Max) @ Id, Vgs : 29 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7311TR
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6.6A
Rds On (Max) @ Id, Vgs : 29 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6.6A
Rds On (Max) @ Id, Vgs : 29 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7311TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6.6A
Rds On (Max) @ Id, Vgs : 29 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6.6A
Rds On (Max) @ Id, Vgs : 29 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
1996 in stock
IRF7313PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6.5A
Rds On (Max) @ Id, Vgs : 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6.5A
Rds On (Max) @ Id, Vgs : 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
180 in stock
IRF7313QTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6.5A
Rds On (Max) @ Id, Vgs : 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6.5A
Rds On (Max) @ Id, Vgs : 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7313TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6.5A
Rds On (Max) @ Id, Vgs : 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6.5A
Rds On (Max) @ Id, Vgs : 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
7635 in stock
IRF7314PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.3A
Rds On (Max) @ Id, Vgs : 58 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.3A
Rds On (Max) @ Id, Vgs : 58 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7314QTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.2A
Rds On (Max) @ Id, Vgs : 58 mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 913pF @ 15V
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.2A
Rds On (Max) @ Id, Vgs : 58 mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 913pF @ 15V
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7314TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.3A
Rds On (Max) @ Id, Vgs : 58 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.3A
Rds On (Max) @ Id, Vgs : 58 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 15V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
2132 in stock
IRF7316GTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4.9A
Rds On (Max) @ Id, Vgs : 58 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 710pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4.9A
Rds On (Max) @ Id, Vgs : 58 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 710pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7316PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4.9A
Rds On (Max) @ Id, Vgs : 58 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 710pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4.9A
Rds On (Max) @ Id, Vgs : 58 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 710pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
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