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Toshiba Semiconductor and Storage
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Part Number
Manufacturer
Description
Unit Price
In Stock
2SK2145-BL(TE85L,F
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS) : -
Drain to Source Voltage (Vdss) : -
Current - Drain (Idss) @ Vds (Vgs=0) : 6mA @ 10V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 200mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds : 13pF @ 10V
Resistance - RDS(On) : -
Power - Max : 300mW
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74A, SOT-753
Supplier Device Package : SMV
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS) : -
Drain to Source Voltage (Vdss) : -
Current - Drain (Idss) @ Vds (Vgs=0) : 6mA @ 10V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 200mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds : 13pF @ 10V
Resistance - RDS(On) : -
Power - Max : 300mW
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74A, SOT-753
Supplier Device Package : SMV
0
100 in stock
2SK2145-GR(TE85L,F
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS) : -
Drain to Source Voltage (Vdss) : -
Current - Drain (Idss) @ Vds (Vgs=0) : 2.6mA @ 10V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 200mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds : 13pF @ 10V
Resistance - RDS(On) : -
Power - Max : 300mW
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74A, SOT-753
Supplier Device Package : SMV
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS) : -
Drain to Source Voltage (Vdss) : -
Current - Drain (Idss) @ Vds (Vgs=0) : 2.6mA @ 10V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 200mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds : 13pF @ 10V
Resistance - RDS(On) : -
Power - Max : 300mW
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74A, SOT-753
Supplier Device Package : SMV
0
100 in stock
2SK2145-Y(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS) : -
Drain to Source Voltage (Vdss) : -
Current - Drain (Idss) @ Vds (Vgs=0) : 1.2mA @ 10V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 200mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds : 13pF @ 10V
Resistance - RDS(On) : -
Power - Max : 300mW
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74A, SOT-753
Supplier Device Package : SMV
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS) : -
Drain to Source Voltage (Vdss) : -
Current - Drain (Idss) @ Vds (Vgs=0) : 1.2mA @ 10V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 200mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds : 13pF @ 10V
Resistance - RDS(On) : -
Power - Max : 300mW
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74A, SOT-753
Supplier Device Package : SMV
0
100 in stock
.jpg "Show details for 2SK2231(TE16R1,NQ)")
2SK2231(TE16R1,NQ)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 160 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 370pF @ 10V
FET Feature : -
Power Dissipation (Max) : 20W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PW-MOLD
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 160 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 370pF @ 10V
FET Feature : -
Power Dissipation (Max) : 20W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PW-MOLD
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
.jpg "Show details for 2SK2266(TE24R,Q)")
2SK2266(TE24R,Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 30 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 10V
FET Feature : -
Power Dissipation (Max) : 65W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-220SM
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 30 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 10V
FET Feature : -
Power Dissipation (Max) : 65W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-220SM
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
2SK2376(Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 17 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3350pF @ 10V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FL
Package / Case : TO-220-3, Short Tab
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 17 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3350pF @ 10V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FL
Package / Case : TO-220-3, Short Tab
0
100 in stock
.jpg "Show details for 2SK2507(F)")
2SK2507(F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 46 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
FET Feature : -
Power Dissipation (Max) : 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220NIS
Package / Case : TO-220-3 Full Pack
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 46 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
FET Feature : -
Power Dissipation (Max) : 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220NIS
Package / Case : TO-220-3 Full Pack
0
100 in stock
.jpg "Show details for 2SK2544(F)")
2SK2544(F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.25 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 10V
FET Feature : -
Power Dissipation (Max) : 80W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.25 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 10V
FET Feature : -
Power Dissipation (Max) : 80W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3
0
100 in stock
.jpg "Show details for 2SK2719(F)")
2SK2719(F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.3 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 750pF @ 25V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(N)
Package / Case : TO-3P-3, SC-65-3
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.3 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 750pF @ 25V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(N)
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
.jpg "Show details for 2SK2744(F)")
2SK2744(F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 20 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 68nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 10V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(N)
Package / Case : TO-3P-3, SC-65-3
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 20 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 68nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 10V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(N)
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
.jpg "Show details for 2SK2845(TE16L1,Q)")
2SK2845(TE16L1,Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 9 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 25V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DP
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 9 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 25V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DP
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
.jpg "Show details for 2SK2847(F)")
2SK2847(F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 58nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2040pF @ 25V
FET Feature : -
Power Dissipation (Max) : 85W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(N)IS
Package / Case : TO-3P-3, SC-65-3
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 58nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2040pF @ 25V
FET Feature : -
Power Dissipation (Max) : 85W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(N)IS
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
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