Toshiba Semiconductor and Storage
- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
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Part Number
Manufacturer
Description
Unit Price
In Stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 40 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 5.5pF @ 3V
FET Feature : -
Power Dissipation (Max) : 200mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-59
Package / Case : TO-236-3, SC-59, SOT-23-3
0
2015 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 40 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 5.5pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-70
Package / Case : SC-70, SOT-323
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 50MA, 2.5V
Vgs(th) (Max) @ Id : 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 70pF @ 3V
FET Feature : -
Power Dissipation (Max) : 200mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-59-3
Package / Case : TO-236-3, SC-59, SOT-23-3
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 8.5pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-70
Package / Case : SC-70, SOT-323
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : 10V
Input Capacitance (Ciss) (Max) @ Vds : 8.5pF @ 3V
FET Feature : -
Power Dissipation (Max) : 100mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SSM
Package / Case : SC-75, SOT-416
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Voltage - Breakdown (V(BR)GSS) : -
Drain to Source Voltage (Vdss) : -
Current - Drain (Idss) @ Vds (Vgs=0) : 2.6mA @ 10V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 400mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds : 8.2pF @ 10V
Resistance - RDS(On) : -
Power - Max : 100mW
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SC-59
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Voltage - Breakdown (V(BR)GSS) : -
Drain to Source Voltage (Vdss) : -
Current - Drain (Idss) @ Vds (Vgs=0) : 600µA @ 10V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 400mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds : 8.2pF @ 10V
Resistance - RDS(On) : -
Power - Max : 100mW
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SC-59
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Voltage - Breakdown (V(BR)GSS) : -
Drain to Source Voltage (Vdss) : -
Current - Drain (Idss) @ Vds (Vgs=0) : 300µA @ 10V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 400mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds : 8.2pF @ 10V
Resistance - RDS(On) : -
Power - Max : 100mW
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
FET Type : N-Channel
Voltage - Breakdown (V(BR)GSS) : -
Drain to Source Voltage (Vdss) : -
Current - Drain (Idss) @ Vds (Vgs=0) : 1.2mA @ 10V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 400mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds : 8.2pF @ 10V
Resistance - RDS(On) : -
Power - Max : 100mW
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
Transistor Type : N-Channel JFET
Frequency : 1kHz
Gain : -
Voltage - Test : 10V
Current Rating : -
Noise Figure : 1dB
Current - Test : 500µA
Power - Output : -
Voltage - Rated : -
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SC-59
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : N-Channel JFET
Frequency : 1kHz
Gain : -
Voltage - Test : 10V
Current Rating : -
Noise Figure : 1dB
Current - Test : 500µA
Power - Output : -
Voltage - Rated : -
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SC-59
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
Transistor Type : N-Channel JFET
Frequency : 1kHz
Gain : -
Voltage - Test : 10V
Current Rating : -
Noise Figure : 1dB
Current - Test : 500µA
Power - Output : -
Voltage - Rated : -
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SC-59
0
100 in stock
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