On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.
Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.
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Part Number
Manufacturer
Description
Unit Price
In Stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.7 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 150nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4340pF @ 25V
FET Feature : -
Power Dissipation (Max) : 220W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-262
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 66A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3450pF @ 25V
FET Feature : -
Power Dissipation (Max) : 170W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 75V
Current - Continuous Drain (Id) @ 25°C : 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.8 mOhm @ 110A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 260nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7580pF @ 25V
FET Feature : -
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK (7-Lead)
Package / Case : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.7 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 150nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4340pF @ 25V
FET Feature : -
Power Dissipation (Max) : 200W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-262
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 58 mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.9nC @ 5V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 25V
FET Feature : -
Power Dissipation (Max) : 35W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 9 mOhm @ 42A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1510pF @ 25V
FET Feature : -
Power Dissipation (Max) : 90W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 40 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 5V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 880pF @ 25V
FET Feature : -
Power Dissipation (Max) : 68W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I-PAK
Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : -
Series : -
Part Status : Obsolete
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 300V
Current - Continuous Drain (Id) @ 25°C : 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 59 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 247nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 7370pF @ 25V
FET Feature : -
Power Dissipation (Max) : 430W (Tc)
Operating Temperature : -40°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AC
Package / Case : TO-247-3
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.1 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id : 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 110nC @ 5V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 5080pF @ 25V
FET Feature : -
Power Dissipation (Max) : 230W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 14A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 8.1 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.1W (Ta), 42W (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DIRECTFET™ST
Package / Case : DirectFET™Isometric ST
0
100 in stock
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 27A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.7 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id : 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4130pF @ 10V
FET Feature : -
Power Dissipation (Max) : 2.8W (Ta), 89W (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DIRECTFET™MX
Package / Case : DirectFET™Isometric MX
0
100 in stock
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