Welcome to Weijie Semiconductor

Global Power Technologies Group, Inc.

- Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.

Image
Part Number
Manufacturer
Description
Unit Price
In Stock

GP2M020A050F GP2M020A050F

Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 300 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 44nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2880pF @ 25V
FET Feature : -
Power Dissipation (Max) : 48W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220F
Package / Case : TO-220-3 Full Pack
0
100 in stock

GP2M020A050H GP2M020A050H

Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 300 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 44nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2880pF @ 25V
FET Feature : -
Power Dissipation (Max) : 290W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
100 in stock

GP2M020A050N GP2M020A050N

Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 300 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 44nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2880pF @ 25V
FET Feature : -
Power Dissipation (Max) : 312W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3PN
Package / Case : TO-3P-3, SC-65-3
0
100 in stock

GP2M020A060N GP2M020A060N

Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 330 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 70nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3184pF @ 25V
FET Feature : -
Power Dissipation (Max) : 347W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3PN
Package / Case : TO-3P-3, SC-65-3
0
100 in stock

GP2M023A050N GP2M023A050N

Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 220 mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 64nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3270pF @ 25V
FET Feature : -
Power Dissipation (Max) : 347W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3PN
Package / Case : TO-3P-3, SC-65-3
0
100 in stock

GPA020A135MN-FD GPA020A135MN-FD

Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1350V
Current - Collector (Ic) (Max) : 40A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 2.3V @ 15V, 20A
Power - Max : 223W
Switching Energy : 2.5mJ (on), 760µJ (off)
Input Type : Standard
Gate Charge : 180nC
Td (on/off) @ 25°C : 25ns/175ns
Test Condition : 600V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) : 425ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3
Supplier Device Package : TO-3P
0
31 in stock

GPA040A120L-FD GPA040A120L-FD

Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 80A
Current - Collector Pulsed (Icm) : 120A
Vce(on) (Max) @ Vge, Ic : 2.6V @ 15V, 40A
Power - Max : 480W
Switching Energy : 5.3mJ (on), 1.1mJ (off)
Input Type : Standard
Gate Charge : 480nC
Td (on/off) @ 25°C : 55ns/200ns
Test Condition : 600V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) : 200ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264
0
2198 in stock

GSID080A120B1A5 GSID080A120B1A5

Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Series : Amp+™
Part Status : Active
IGBT Type : -
Configuration : Single
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 160A
Power - Max : 1710W
Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 80A
Current - Collector Cutoff (Max) : 1mA
Input Capacitance (Cies) @ Vce : 7nF @ 25V
Input : Standard
NTC Thermistor : Yes
Operating Temperature : -40°C ~ 150°C
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module
0
100 in stock

GSID100A120S5C1 GSID100A120S5C1

Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Series : -
Part Status : Active
IGBT Type : -
Configuration : Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 170A
Power - Max : 650W
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 100A
Current - Collector Cutoff (Max) : 1mA
Input Capacitance (Cies) @ Vce : 13.7nF @ 25V
Input : Standard
NTC Thermistor : Yes
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module
0
5 in stock

GSID100A120T2C1 GSID100A120T2C1

Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Series : Amp+™
Part Status : Active
IGBT Type : -
Configuration : Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 200A
Power - Max : 640W
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 100A
Current - Collector Cutoff (Max) : 1mA
Input Capacitance (Cies) @ Vce : 13.7nF @ 25V
Input : Three Phase Bridge Rectifier
NTC Thermistor : Yes
Operating Temperature : -40°C ~ 150°C
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module
0
100 in stock

GSID100A120T2C1A GSID100A120T2C1A

Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Series : Amp+™
Part Status : Active
IGBT Type : -
Configuration : Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 200A
Power - Max : 800W
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 100A
Current - Collector Cutoff (Max) : 1mA
Input Capacitance (Cies) @ Vce : 13.7nF @ 25V
Input : Three Phase Bridge Rectifier
NTC Thermistor : Yes
Operating Temperature : -40°C ~ 150°C
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module
0
100 in stock

GSID100A120T2P2 GSID100A120T2P2

Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Series : Amp+™
Part Status : Active
IGBT Type : -
Configuration : Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 200A
Power - Max : 710W
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 100A
Current - Collector Cutoff (Max) : 1mA
Input Capacitance (Cies) @ Vce : 13.7nF @ 25V
Input : Three Phase Bridge Rectifier
NTC Thermistor : Yes
Operating Temperature : -40°C ~ 150°C
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module
0
100 in stock