GeneSiC Semiconductor
- GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.
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Part Number
Manufacturer
Description
Unit Price
In Stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 140 mOhm @ 10A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 170W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AB
Package / Case : TO-247-3
0
100 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 120 mOhm @ 10A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1403pF @ 800V
FET Feature : -
Power Dissipation (Max) : 170W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : -
Package / Case : -
0
740 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Series : -
Part Status : Active
Type : Power Management
Function : Gate Driver
Embedded : -
Utilized IC / Part : -
Primary Attributes : Isolated
Supplied Contents : Board(s)
0
3 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 16A (Tc) (90°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 110 mOhm @ 16A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 282W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AB
Package / Case : TO-247-3
0
100 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 70 mOhm @ 20A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 282W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AB
Package / Case : TO-247-3
0
100 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 60 mOhm @ 20A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 3091pF @ 800V
FET Feature : -
Power Dissipation (Max) : 282W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK (7-Lead)
Package / Case : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
0
254 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Series : -
Part Status : Active
Type : -
Configuration : -
Current : 20A
Voltage : 1.2kV
Voltage - Isolation : -
Package / Case : TO-263-3, D²Pak (7 Leads + Tab), TO-263CA
0
90 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 25 mOhm @ 50A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 769W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-258
Package / Case : TO-258-3, TO-258AA
0
100 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 25 mOhm @ 50A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 7209pF @ 800V
FET Feature : -
Power Dissipation (Max) : 583W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AB
Package / Case : TO-247-3
0
32 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : -
Series : *
Part Status : Obsolete
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 25 mOhm @ 50A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 583W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247
Package / Case : TO-247-3
0
100 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Series : -
Part Status : Active
Type : -
Configuration : -
Current : 50A
Voltage : 1.2kV
Voltage - Isolation : -
Package / Case : SOT-227-4, miniBLOC
0
100 in stock
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