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GeneSiC Semiconductor
- GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.
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Part Number
Manufacturer
Description
Unit Price
In Stock
GAP3SLT33-214
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 3300V
Current - Average Rectified (Io) : 300mA (DC)
Voltage - Forward (Vf) (Max) @ If : 2.2V @ 300mA
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 3300V
Capacitance @ Vr, F : 42pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA
Operating Temperature - Junction : -55°C ~ 175°C
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 3300V
Current - Average Rectified (Io) : 300mA (DC)
Voltage - Forward (Vf) (Max) @ If : 2.2V @ 300mA
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 3300V
Capacitance @ Vr, F : 42pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA
Operating Temperature - Junction : -55°C ~ 175°C
0
2728 in stock
GAP3SLT33-220FP
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 3300V
Current - Average Rectified (Io) : 300mA
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 300mA
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 3300V
Capacitance @ Vr, F : 42pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2 Full Pack
Supplier Device Package : TO-220FP
Operating Temperature - Junction : -55°C ~ 175°C
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 3300V
Current - Average Rectified (Io) : 300mA
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 300mA
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 3300V
Capacitance @ Vr, F : 42pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2 Full Pack
Supplier Device Package : TO-220FP
Operating Temperature - Junction : -55°C ~ 175°C
0
2755 in stock
GB01SLT06-214
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 1A (DC)
Voltage - Forward (Vf) (Max) @ If : 2V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 6.5V
Capacitance @ Vr, F : 76pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA
Operating Temperature - Junction : -55°C ~ 175°C
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 1A (DC)
Voltage - Forward (Vf) (Max) @ If : 2V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 6.5V
Capacitance @ Vr, F : 76pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA
Operating Temperature - Junction : -55°C ~ 175°C
0
1558 in stock
GB01SLT12-214
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 2.5A
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 1200V
Capacitance @ Vr, F : 69pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : SMB (DO-214AA)
Operating Temperature - Junction : -55°C ~ 175°C
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 2.5A
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 1200V
Capacitance @ Vr, F : 69pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : SMB (DO-214AA)
Operating Temperature - Junction : -55°C ~ 175°C
0
100 in stock
GB01SLT12-220
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 2µA @ 1200V
Capacitance @ Vr, F : 69pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220AC
Operating Temperature - Junction : -55°C ~ 175°C
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 2µA @ 1200V
Capacitance @ Vr, F : 69pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220AC
Operating Temperature - Junction : -55°C ~ 175°C
0
1747 in stock
GB01SLT12-252
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 2µA @ 1200V
Capacitance @ Vr, F : 69pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : TO-252
Operating Temperature - Junction : -55°C ~ 175°C
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 2µA @ 1200V
Capacitance @ Vr, F : 69pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : TO-252
Operating Temperature - Junction : -55°C ~ 175°C
0
3848 in stock
GB02SHT01-46
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 4A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.6V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 76pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-206AB, TO-46-3 Metal Can
Supplier Device Package : TO-46
Operating Temperature - Junction : -55°C ~ 225°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 4A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.6V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 76pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-206AB, TO-46-3 Metal Can
Supplier Device Package : TO-46
Operating Temperature - Junction : -55°C ~ 225°C
0
28 in stock
GB02SHT03-46
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 300V
Current - Average Rectified (Io) : 4A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.6V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 300V
Capacitance @ Vr, F : 76pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-206AB, TO-46-3 Metal Can
Supplier Device Package : TO-46
Operating Temperature - Junction : -55°C ~ 225°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 300V
Current - Average Rectified (Io) : 4A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.6V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 300V
Capacitance @ Vr, F : 76pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-206AB, TO-46-3 Metal Can
Supplier Device Package : TO-46
Operating Temperature - Junction : -55°C ~ 225°C
0
168 in stock
GB02SHT06-46
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 4A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.6V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 76pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-206AB, TO-46-3 Metal Can
Supplier Device Package : TO-46
Operating Temperature - Junction : -55°C ~ 225°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 4A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.6V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 76pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-206AB, TO-46-3 Metal Can
Supplier Device Package : TO-46
Operating Temperature - Junction : -55°C ~ 225°C
0
43 in stock
GB02SLT12-214
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 2A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 50µA @ 1200V
Capacitance @ Vr, F : 131pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA
Operating Temperature - Junction : -55°C ~ 175°C
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 2A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 1A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 50µA @ 1200V
Capacitance @ Vr, F : 131pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA
Operating Temperature - Junction : -55°C ~ 175°C
0
100 in stock
GB02SLT12-220
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 2A
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 2A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 50µA @ 1200V
Capacitance @ Vr, F : 138pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220AC
Operating Temperature - Junction : -55°C ~ 175°C
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 2A
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 2A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 50µA @ 1200V
Capacitance @ Vr, F : 138pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220AC
Operating Temperature - Junction : -55°C ~ 175°C
0
59 in stock
GB02SLT12-252
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Cut Tape (CT)
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 5A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 2A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 50µA @ 1200V
Capacitance @ Vr, F : 131pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : TO-252
Operating Temperature - Junction : -55°C ~ 175°C
Packaging : Cut Tape (CT)
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 5A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 2A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 50µA @ 1200V
Capacitance @ Vr, F : 131pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : TO-252
Operating Temperature - Junction : -55°C ~ 175°C
0
658 in stock
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