GeneSiC Semiconductor
- GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.
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Part Number
Manufacturer
Description
Unit Price
In Stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 85A
Voltage - Forward (Vf) (Max) @ If : 1.4V @ 85A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 250ns
Current - Reverse Leakage @ Vr : 25µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AB, DO-5, Stud
Supplier Device Package : DO-5
Operating Temperature - Junction : -40°C ~ 125°C
0
28 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 85A
Voltage - Forward (Vf) (Max) @ If : 1.4V @ 85A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 500ns
Current - Reverse Leakage @ Vr : 25µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AB, DO-5, Stud
Supplier Device Package : DO-5
Operating Temperature - Junction : -40°C ~ 125°C
0
70 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Configuration : 1 Pair Common Cathode
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 35V
Current - Average Rectified (Io) (per Diode) : 160A
Voltage - Forward (Vf) (Max) @ If : 750mV @ 160A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 1mA @ 20V
Operating Temperature - Junction : -55°C ~ 150°C
Mounting Type : Chassis Mount
Package / Case : TO-249AB
Supplier Device Package : TO-249AB
0
49 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : PIN - Single
Voltage - Peak Reverse (Max) : 15000V
Current - Max : 1A
Capacitance @ Vr, F : 7pF @ 1000V, 1MHz
Resistance @ If, F : -
Power Dissipation (Max) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Package / Case : Axial
Supplier Device Package : -
0
8 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : PIN - Single
Voltage - Peak Reverse (Max) : 8000V
Current - Max : 2A
Capacitance @ Vr, F : 4pF @ 1000V, 1MHz
Resistance @ If, F : -
Power Dissipation (Max) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Package / Case : Axial
Supplier Device Package : -
0
100 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Series : -
Part Status : Active
Type : Power Management
Function : Gate Driver
Embedded : -
Utilized IC / Part : -
Primary Attributes : Isolated
Supplied Contents : Board(s)
0
7 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 3A (Tc) (95°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 460 mOhm @ 3A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 15W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AB
Package / Case : TO-247-3
0
100 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Structure : Single
Number of SCRs, Diodes : 1 SCR
Voltage - Off State : 6.5kV
Current - On State (It (AV)) (Max) : 40A
Current - On State (It (RMS)) (Max) : 69A
Voltage - Gate Trigger (Vgt) (Max) : -
Current - Gate Trigger (Igt) (Max) : 30mA
Current - Non Rep. Surge 50, 60Hz (Itsm) : -
Current - Hold (Ih) (Max) : 780mA
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : -
Package / Case : SOT-227-2
0
100 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Structure : Single
Number of SCRs, Diodes : 1 SCR
Voltage - Off State : 6.5kV
Current - On State (It (AV)) (Max) : 40A
Current - On State (It (RMS)) (Max) : 69A
Voltage - Gate Trigger (Vgt) (Max) : -
Current - Gate Trigger (Igt) (Max) : 30mA
Current - Non Rep. Surge 50, 60Hz (Itsm) : -
Current - Hold (Ih) (Max) : 780mA
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Module
0
100 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc) (95°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 480 mOhm @ 4A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 106W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AB
Package / Case : TO-247-3
0
100 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 240 mOhm @ 5A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 20W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-46
Package / Case : TO-46-3
0
79 in stock
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 300V
Current - Continuous Drain (Id) @ 25°C : 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 240 mOhm @ 5A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 20W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-46
Package / Case : TO-46-3
0
25 in stock
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