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GeneSiC Semiconductor
- GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.
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Part Number
Manufacturer
Description
Unit Price
In Stock
1N8035-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 14.6A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.5V @ 15A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 1107pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-276AA
Supplier Device Package : TO-276
Operating Temperature - Junction : -55°C ~ 250°C
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 14.6A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.5V @ 15A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 1107pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-276AA
Supplier Device Package : TO-276
Operating Temperature - Junction : -55°C ~ 250°C
0
100 in stock
2N7635-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 415 mOhm @ 4A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 324pF @ 35V
FET Feature : -
Power Dissipation (Max) : 47W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-257
Package / Case : TO-257-3
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 415 mOhm @ 4A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 324pF @ 35V
FET Feature : -
Power Dissipation (Max) : 47W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-257
Package / Case : TO-257-3
0
100 in stock
2N7636-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 415 mOhm @ 4A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 324pF @ 35V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-276
Package / Case : TO-276AA
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 415 mOhm @ 4A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 324pF @ 35V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-276
Package / Case : TO-276AA
0
100 in stock
2N7637-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 7A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 170 mOhm @ 7A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 35V
FET Feature : -
Power Dissipation (Max) : 80W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-257
Package / Case : TO-257-3
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 7A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 170 mOhm @ 7A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 35V
FET Feature : -
Power Dissipation (Max) : 80W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-257
Package / Case : TO-257-3
0
100 in stock
2N7638-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc) (158°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 170 mOhm @ 8A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 35V
FET Feature : -
Power Dissipation (Max) : 200W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-276
Package / Case : TO-276AA
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc) (158°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 170 mOhm @ 8A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 35V
FET Feature : -
Power Dissipation (Max) : 200W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-276
Package / Case : TO-276AA
0
100 in stock
2N7639-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 15A (Tc) (155°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 105 mOhm @ 15A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1534pF @ 35V
FET Feature : -
Power Dissipation (Max) : 172W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-257
Package / Case : TO-257-3
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 15A (Tc) (155°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 105 mOhm @ 15A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1534pF @ 35V
FET Feature : -
Power Dissipation (Max) : 172W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-257
Package / Case : TO-257-3
0
100 in stock
2N7640-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 16A (Tc) (155°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 105 mOhm @ 16A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1534pF @ 35V
FET Feature : -
Power Dissipation (Max) : 330W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-276
Package / Case : TO-276AA
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 16A (Tc) (155°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 105 mOhm @ 16A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1534pF @ 35V
FET Feature : -
Power Dissipation (Max) : 330W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-276
Package / Case : TO-276AA
0
100 in stock
BR108
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Single Phase
Technology : Standard
Voltage - Peak Reverse (Max) : 800V
Current - Average Rectified (Io) : 10A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 5A
Current - Reverse Leakage @ Vr : 10µA @ 800V
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : 4-Square, BR-10
Supplier Device Package : BR-10
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Single Phase
Technology : Standard
Voltage - Peak Reverse (Max) : 800V
Current - Average Rectified (Io) : 10A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 5A
Current - Reverse Leakage @ Vr : 10µA @ 800V
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : 4-Square, BR-10
Supplier Device Package : BR-10
0
378 in stock
BR62
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Single Phase
Technology : Standard
Voltage - Peak Reverse (Max) : 200V
Current - Average Rectified (Io) : 6A
Voltage - Forward (Vf) (Max) @ If : 1V @ 3A
Current - Reverse Leakage @ Vr : 10µA @ 200V
Operating Temperature : -65°C ~ 125°C (TJ)
Mounting Type : Through Hole
Package / Case : 4-Square, BR-6
Supplier Device Package : BR-6
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Single Phase
Technology : Standard
Voltage - Peak Reverse (Max) : 200V
Current - Average Rectified (Io) : 6A
Voltage - Forward (Vf) (Max) @ If : 1V @ 3A
Current - Reverse Leakage @ Vr : 10µA @ 200V
Operating Temperature : -65°C ~ 125°C (TJ)
Mounting Type : Through Hole
Package / Case : 4-Square, BR-6
Supplier Device Package : BR-6
0
2409 in stock
BR81
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Single Phase
Technology : Standard
Voltage - Peak Reverse (Max) : 100V
Current - Average Rectified (Io) : 8A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 4A
Current - Reverse Leakage @ Vr : 10µA @ 100V
Operating Temperature : -65°C ~ 125°C (TJ)
Mounting Type : Through Hole
Package / Case : 4-Square, BR-8
Supplier Device Package : BR-8
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Single Phase
Technology : Standard
Voltage - Peak Reverse (Max) : 100V
Current - Average Rectified (Io) : 8A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 4A
Current - Reverse Leakage @ Vr : 10µA @ 100V
Operating Temperature : -65°C ~ 125°C (TJ)
Mounting Type : Through Hole
Package / Case : 4-Square, BR-8
Supplier Device Package : BR-8
0
506 in stock
DB103G
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Single Phase
Technology : Standard
Voltage - Peak Reverse (Max) : 200V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A
Current - Reverse Leakage @ Vr : 10µA @ 200V
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : 4-EDIP (0.321", 8.15mm)
Supplier Device Package : DB
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Single Phase
Technology : Standard
Voltage - Peak Reverse (Max) : 200V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A
Current - Reverse Leakage @ Vr : 10µA @ 200V
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : 4-EDIP (0.321", 8.15mm)
Supplier Device Package : DB
0
123 in stock
FR12M05
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1000V
Current - Average Rectified (Io) : 12A
Voltage - Forward (Vf) (Max) @ If : 800mV @ 12A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 500ns
Current - Reverse Leakage @ Vr : 25µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-4
Operating Temperature - Junction : -65°C ~ 150°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1000V
Current - Average Rectified (Io) : 12A
Voltage - Forward (Vf) (Max) @ If : 800mV @ 12A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 500ns
Current - Reverse Leakage @ Vr : 25µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-4
Operating Temperature - Junction : -65°C ~ 150°C
0
10 in stock
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