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GeneSiC Semiconductor
- GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.
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Part Number
Manufacturer
Description
Unit Price
In Stock
1N3889R
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) : 50V
Current - Average Rectified (Io) : 12A
Voltage - Forward (Vf) (Max) @ If : 1.4V @ 12A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 200ns
Current - Reverse Leakage @ Vr : 25µA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-4
Operating Temperature - Junction : -65°C ~ 150°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) : 50V
Current - Average Rectified (Io) : 12A
Voltage - Forward (Vf) (Max) @ If : 1.4V @ 12A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 200ns
Current - Reverse Leakage @ Vr : 25µA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-4
Operating Temperature - Junction : -65°C ~ 150°C
0
2097 in stock
1N3891
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 12A
Voltage - Forward (Vf) (Max) @ If : 1.4V @ 12A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 200ns
Current - Reverse Leakage @ Vr : 25µA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-4
Operating Temperature - Junction : -65°C ~ 150°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 12A
Voltage - Forward (Vf) (Max) @ If : 1.4V @ 12A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 200ns
Current - Reverse Leakage @ Vr : 25µA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-4
Operating Temperature - Junction : -65°C ~ 150°C
0
64 in stock
1N3892
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 400V
Current - Average Rectified (Io) : 12A
Voltage - Forward (Vf) (Max) @ If : 1.4V @ 12A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 200ns
Current - Reverse Leakage @ Vr : 25µA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-4
Operating Temperature - Junction : -65°C ~ 150°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 400V
Current - Average Rectified (Io) : 12A
Voltage - Forward (Vf) (Max) @ If : 1.4V @ 12A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 200ns
Current - Reverse Leakage @ Vr : 25µA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-4
Operating Temperature - Junction : -65°C ~ 150°C
0
809 in stock
1N3892R
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) : 400V
Current - Average Rectified (Io) : 12A
Voltage - Forward (Vf) (Max) @ If : 1.4V @ 12A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 200ns
Current - Reverse Leakage @ Vr : 25µA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-4
Operating Temperature - Junction : -65°C ~ 150°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) : 400V
Current - Average Rectified (Io) : 12A
Voltage - Forward (Vf) (Max) @ If : 1.4V @ 12A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 200ns
Current - Reverse Leakage @ Vr : 25µA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-4
Operating Temperature - Junction : -65°C ~ 150°C
0
999 in stock
1N3893R
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 12A
Voltage - Forward (Vf) (Max) @ If : 1.4V @ 12A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 200ns
Current - Reverse Leakage @ Vr : 25µA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-4
Operating Temperature - Junction : -65°C ~ 150°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 12A
Voltage - Forward (Vf) (Max) @ If : 1.4V @ 12A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 200ns
Current - Reverse Leakage @ Vr : 25µA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-4
Operating Temperature - Junction : -65°C ~ 150°C
0
98 in stock
1N4595R
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 150A
Voltage - Forward (Vf) (Max) @ If : 1.5V @ 150A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 4mA @ 1200V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-205AA, DO-8, Stud
Supplier Device Package : DO-205AA (DO-8)
Operating Temperature - Junction : -60°C ~ 200°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 150A
Voltage - Forward (Vf) (Max) @ If : 1.5V @ 150A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 4mA @ 1200V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-205AA, DO-8, Stud
Supplier Device Package : DO-205AA (DO-8)
Operating Temperature - Junction : -60°C ~ 200°C
0
66 in stock
1N6095R
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) : 30V
Current - Average Rectified (Io) : 25A
Voltage - Forward (Vf) (Max) @ If : 580mV @ 25A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 2mA @ 20V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-4
Operating Temperature - Junction : -55°C ~ 150°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) : 30V
Current - Average Rectified (Io) : 25A
Voltage - Forward (Vf) (Max) @ If : 580mV @ 25A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 2mA @ 20V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-4
Operating Temperature - Junction : -55°C ~ 150°C
0
18 in stock
1N6098
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 40V
Current - Average Rectified (Io) : 50A
Voltage - Forward (Vf) (Max) @ If : 700mV @ 50A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 5mA @ 30V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AB, DO-5, Stud
Supplier Device Package : DO-5
Operating Temperature - Junction : -65°C ~ 150°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 40V
Current - Average Rectified (Io) : 50A
Voltage - Forward (Vf) (Max) @ If : 700mV @ 50A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 5mA @ 30V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AB, DO-5, Stud
Supplier Device Package : DO-5
Operating Temperature - Junction : -65°C ~ 150°C
0
103 in stock
1N8024-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 750mA
Voltage - Forward (Vf) (Max) @ If : 1.74V @ 750mA
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 1200V
Capacitance @ Vr, F : 66pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 750mA
Voltage - Forward (Vf) (Max) @ If : 1.74V @ 750mA
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 1200V
Capacitance @ Vr, F : 66pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
0
9 in stock
1N8026-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 8A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.6V @ 2.5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 1200V
Capacitance @ Vr, F : 237pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 8A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.6V @ 2.5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 1200V
Capacitance @ Vr, F : 237pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
0
1 in stock
1N8030-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 750mA
Voltage - Forward (Vf) (Max) @ If : 1.39V @ 750mA
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 76pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 750mA
Voltage - Forward (Vf) (Max) @ If : 1.39V @ 750mA
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 76pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
0
9 in stock
1N8032-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 2.5A
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 2.5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 274pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 2.5A
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 2.5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 274pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
0
4 in stock
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