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Part Number
Manufacturer
Description
Unit Price
In Stock
APT15GP60BDLG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 56A
Current - Collector Pulsed (Icm) : 65A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 15A
Power - Max : 250W
Switching Energy : 130µJ (on), 121µJ (off)
Input Type : Standard
Gate Charge : 55nC
Td (on/off) @ 25°C : 8ns/29ns
Test Condition : 400V, 15A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
Packaging : Tube
Series : -
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 56A
Current - Collector Pulsed (Icm) : 65A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 15A
Power - Max : 250W
Switching Energy : 130µJ (on), 121µJ (off)
Input Type : Standard
Gate Charge : 55nC
Td (on/off) @ 25°C : 8ns/29ns
Test Condition : 400V, 15A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
0
100 in stock
APT15GP60BDQ1G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 56A
Current - Collector Pulsed (Icm) : 65A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 15A
Power - Max : 250W
Switching Energy : 130µJ (on), 120µJ (off)
Input Type : Standard
Gate Charge : 55nC
Td (on/off) @ 25°C : 8ns/29ns
Test Condition : 400V, 15A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 56A
Current - Collector Pulsed (Icm) : 65A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 15A
Power - Max : 250W
Switching Energy : 130µJ (on), 120µJ (off)
Input Type : Standard
Gate Charge : 55nC
Td (on/off) @ 25°C : 8ns/29ns
Test Condition : 400V, 15A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
APT15GP60BG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 56A
Current - Collector Pulsed (Icm) : 65A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 15A
Power - Max : 250W
Switching Energy : 130µJ (on), 121µJ (off)
Input Type : Standard
Gate Charge : 55nC
Td (on/off) @ 25°C : 8ns/29ns
Test Condition : 400V, 15A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 56A
Current - Collector Pulsed (Icm) : 65A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 15A
Power - Max : 250W
Switching Energy : 130µJ (on), 121µJ (off)
Input Type : Standard
Gate Charge : 55nC
Td (on/off) @ 25°C : 8ns/29ns
Test Condition : 400V, 15A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
APT15GP60KG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Obsolete
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 56A
Current - Collector Pulsed (Icm) : 65A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 15A
Power - Max : 250W
Switching Energy : 130µJ (on), 121µJ (off)
Input Type : Standard
Gate Charge : 55nC
Td (on/off) @ 25°C : 8ns/29ns
Test Condition : 400V, 15A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220 [K]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Obsolete
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 56A
Current - Collector Pulsed (Icm) : 65A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 15A
Power - Max : 250W
Switching Energy : 130µJ (on), 121µJ (off)
Input Type : Standard
Gate Charge : 55nC
Td (on/off) @ 25°C : 8ns/29ns
Test Condition : 400V, 15A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220 [K]
0
100 in stock
APT15GP90BDQ1G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 43A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 15A
Power - Max : 250W
Switching Energy : 200µJ (off)
Input Type : Standard
Gate Charge : 60nC
Td (on/off) @ 25°C : 9ns/33ns
Test Condition : 600V, 15A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 43A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 15A
Power - Max : 250W
Switching Energy : 200µJ (off)
Input Type : Standard
Gate Charge : 60nC
Td (on/off) @ 25°C : 9ns/33ns
Test Condition : 600V, 15A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
APT15GP90BG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 43A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 15A
Power - Max : 250W
Switching Energy : 200µJ (off)
Input Type : Standard
Gate Charge : 60nC
Td (on/off) @ 25°C : 9ns/33ns
Test Condition : 600V, 15A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 43A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 15A
Power - Max : 250W
Switching Energy : 200µJ (off)
Input Type : Standard
Gate Charge : 60nC
Td (on/off) @ 25°C : 9ns/33ns
Test Condition : 600V, 15A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
APT15GP90KG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Obsolete
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 43A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 15A
Power - Max : 250W
Switching Energy : 200µJ (off)
Input Type : Standard
Gate Charge : 60nC
Td (on/off) @ 25°C : 9ns/33ns
Test Condition : 600V, 15A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220 [K]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Obsolete
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 43A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 15A
Power - Max : 250W
Switching Energy : 200µJ (off)
Input Type : Standard
Gate Charge : 60nC
Td (on/off) @ 25°C : 9ns/33ns
Test Condition : 600V, 15A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220 [K]
0
100 in stock
APT15GT120BRG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 36A
Current - Collector Pulsed (Icm) : 45A
Vce(on) (Max) @ Vge, Ic : 3.6V @ 15V, 15A
Power - Max : 250W
Switching Energy : 585µJ (on), 260µJ (off)
Input Type : Standard
Gate Charge : 105nC
Td (on/off) @ 25°C : 10ns/85ns
Test Condition : 800V, 15A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 36A
Current - Collector Pulsed (Icm) : 45A
Vce(on) (Max) @ Vge, Ic : 3.6V @ 15V, 15A
Power - Max : 250W
Switching Energy : 585µJ (on), 260µJ (off)
Input Type : Standard
Gate Charge : 105nC
Td (on/off) @ 25°C : 10ns/85ns
Test Condition : 800V, 15A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
30 in stock
APT15GT60KRG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 42A
Current - Collector Pulsed (Icm) : 45A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 15A
Power - Max : 184W
Switching Energy : 150µJ (on), 215µJ (off)
Input Type : Standard
Gate Charge : 75nC
Td (on/off) @ 25°C : 6ns/105ns
Test Condition : 400V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220 [K]
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 42A
Current - Collector Pulsed (Icm) : 45A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 15A
Power - Max : 184W
Switching Energy : 150µJ (on), 215µJ (off)
Input Type : Standard
Gate Charge : 75nC
Td (on/off) @ 25°C : 6ns/105ns
Test Condition : 400V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220 [K]
0
100 in stock
APT200GN60B2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 283A
Current - Collector Pulsed (Icm) : 600A
Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 200A
Power - Max : 682W
Switching Energy : 13mJ (on), 11mJ (off)
Input Type : Standard
Gate Charge : 1180nC
Td (on/off) @ 25°C : 50ns/560ns
Test Condition : 400V, 200A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : -
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 283A
Current - Collector Pulsed (Icm) : 600A
Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 200A
Power - Max : 682W
Switching Energy : 13mJ (on), 11mJ (off)
Input Type : Standard
Gate Charge : 1180nC
Td (on/off) @ 25°C : 50ns/560ns
Test Condition : 400V, 200A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : -
0
33 in stock
APT20GF120BRDQ1G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 36A
Current - Collector Pulsed (Icm) : 64A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 15A
Power - Max : 200W
Switching Energy : 895µJ (on), 840µJ (off)
Input Type : Standard
Gate Charge : 100nC
Td (on/off) @ 25°C : 10ns/120ns
Test Condition : 800V, 15A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 36A
Current - Collector Pulsed (Icm) : 64A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 15A
Power - Max : 200W
Switching Energy : 895µJ (on), 840µJ (off)
Input Type : Standard
Gate Charge : 100nC
Td (on/off) @ 25°C : 10ns/120ns
Test Condition : 800V, 15A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
APT20GF120BRG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 32A
Current - Collector Pulsed (Icm) : 64A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 15A
Power - Max : 200W
Switching Energy : 2.7mJ
Input Type : Standard
Gate Charge : 95nC
Td (on/off) @ 25°C : 17ns/105ns
Test Condition : -
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 32A
Current - Collector Pulsed (Icm) : 64A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 15A
Power - Max : 200W
Switching Energy : 2.7mJ
Input Type : Standard
Gate Charge : 95nC
Td (on/off) @ 25°C : 17ns/105ns
Test Condition : -
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
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