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Part Number
Manufacturer
Description
Unit Price
In Stock
AOTF20B65M2
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : Alpha IGBT™
Part Status : Active
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 40A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 2.15V @ 15V, 20A
Power - Max : 45W
Switching Energy : 580µJ (on), 280µJ (off)
Input Type : Standard
Gate Charge : 46nC
Td (on/off) @ 25°C : 26ns/123ns
Test Condition : 400V, 20A, 15 Ohm, 15V
Reverse Recovery Time (trr) : 292ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220
Packaging : Tube
Series : Alpha IGBT™
Part Status : Active
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 40A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 2.15V @ 15V, 20A
Power - Max : 45W
Switching Energy : 580µJ (on), 280µJ (off)
Input Type : Standard
Gate Charge : 46nC
Td (on/off) @ 25°C : 26ns/123ns
Test Condition : 400V, 20A, 15 Ohm, 15V
Reverse Recovery Time (trr) : 292ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220
0
990 in stock
AOTF5B65M1
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : Alpha IGBT™
Part Status : Active
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 10A
Current - Collector Pulsed (Icm) : 15A
Vce(on) (Max) @ Vge, Ic : 1.98V @ 15V, 5A
Power - Max : 25W
Switching Energy : 80µJ (on), 70µJ (off)
Input Type : Standard
Gate Charge : 14nC
Td (on/off) @ 25°C : 8.5ns/106ns
Test Condition : 400V, 5A, 60 Ohm, 15V
Reverse Recovery Time (trr) : 195ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220
Packaging : Tube
Series : Alpha IGBT™
Part Status : Active
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 10A
Current - Collector Pulsed (Icm) : 15A
Vce(on) (Max) @ Vge, Ic : 1.98V @ 15V, 5A
Power - Max : 25W
Switching Energy : 80µJ (on), 70µJ (off)
Input Type : Standard
Gate Charge : 14nC
Td (on/off) @ 25°C : 8.5ns/106ns
Test Condition : 400V, 5A, 60 Ohm, 15V
Reverse Recovery Time (trr) : 195ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220
0
980 in stock
AOTS40B65H1
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : Alpha IGBT™
Part Status : Active
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 80A
Current - Collector Pulsed (Icm) : 120A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 40A
Power - Max : 300W
Switching Energy : 1.27mJ (on), 460µJ (off)
Input Type : Standard
Gate Charge : 63nC
Td (on/off) @ 25°C : 41ns/130ns
Test Condition : 400V, 40A, 7.5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220
Packaging : Tube
Series : Alpha IGBT™
Part Status : Active
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 80A
Current - Collector Pulsed (Icm) : 120A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 40A
Power - Max : 300W
Switching Energy : 1.27mJ (on), 460µJ (off)
Input Type : Standard
Gate Charge : 63nC
Td (on/off) @ 25°C : 41ns/130ns
Test Condition : 400V, 40A, 7.5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220
0
700 in stock
APT100GN120B2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 245A
Current - Collector Pulsed (Icm) : 300A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 100A
Power - Max : 960W
Switching Energy : 11mJ (on), 9.5mJ (off)
Input Type : Standard
Gate Charge : 540nC
Td (on/off) @ 25°C : 50ns/615ns
Test Condition : 800V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 245A
Current - Collector Pulsed (Icm) : 300A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 100A
Power - Max : 960W
Switching Energy : 11mJ (on), 9.5mJ (off)
Input Type : Standard
Gate Charge : 540nC
Td (on/off) @ 25°C : 50ns/615ns
Test Condition : 800V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
10 in stock
APT100GN60LDQ4G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 229A
Current - Collector Pulsed (Icm) : 300A
Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 100A
Power - Max : 625W
Switching Energy : 4.75mJ (on), 2.675mJ (off)
Input Type : Standard
Gate Charge : 600nC
Td (on/off) @ 25°C : 31ns/310ns
Test Condition : 400V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264 [L]
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 229A
Current - Collector Pulsed (Icm) : 300A
Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 100A
Power - Max : 625W
Switching Energy : 4.75mJ (on), 2.675mJ (off)
Input Type : Standard
Gate Charge : 600nC
Td (on/off) @ 25°C : 31ns/310ns
Test Condition : 400V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264 [L]
0
100 in stock
APT100GT60B2RG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 148A
Current - Collector Pulsed (Icm) : 300A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 100A
Power - Max : 500W
Switching Energy : 3.25mJ (on), 3.125mJ (off)
Input Type : Standard
Gate Charge : 460nC
Td (on/off) @ 25°C : 40ns/320ns
Test Condition : 400V, 100A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 148A
Current - Collector Pulsed (Icm) : 300A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 100A
Power - Max : 500W
Switching Energy : 3.25mJ (on), 3.125mJ (off)
Input Type : Standard
Gate Charge : 460nC
Td (on/off) @ 25°C : 40ns/320ns
Test Condition : 400V, 100A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
100 in stock
APT102GA60B2
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 8™
Part Status : Obsolete
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 183A
Current - Collector Pulsed (Icm) : 307A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 62A
Power - Max : 780W
Switching Energy : 1.354mJ (on), 1.614mJ (off)
Input Type : Standard
Gate Charge : 294nC
Td (on/off) @ 25°C : 28ns/212ns
Test Condition : 400V, 62A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : POWER MOS 8™
Part Status : Obsolete
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 183A
Current - Collector Pulsed (Icm) : 307A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 62A
Power - Max : 780W
Switching Energy : 1.354mJ (on), 1.614mJ (off)
Input Type : Standard
Gate Charge : 294nC
Td (on/off) @ 25°C : 28ns/212ns
Test Condition : 400V, 62A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
100 in stock
APT11GF120BRDQ1G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 25A
Current - Collector Pulsed (Icm) : 24A
Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 8A
Power - Max : 156W
Switching Energy : 300µJ (on), 285µJ (off)
Input Type : Standard
Gate Charge : 65nC
Td (on/off) @ 25°C : 7ns/100ns
Test Condition : 800V, 8A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 25A
Current - Collector Pulsed (Icm) : 24A
Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 8A
Power - Max : 156W
Switching Energy : 300µJ (on), 285µJ (off)
Input Type : Standard
Gate Charge : 65nC
Td (on/off) @ 25°C : 7ns/100ns
Test Condition : 800V, 8A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
100 in stock
APT11GF120KRG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 25A
Current - Collector Pulsed (Icm) : 44A
Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 8A
Power - Max : 156W
Switching Energy : 300µJ (on), 285µJ (off)
Input Type : Standard
Gate Charge : 65nC
Td (on/off) @ 25°C : 7ns/100ns
Test Condition : 800V, 8A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220 [K]
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 25A
Current - Collector Pulsed (Icm) : 44A
Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 8A
Power - Max : 156W
Switching Energy : 300µJ (on), 285µJ (off)
Input Type : Standard
Gate Charge : 65nC
Td (on/off) @ 25°C : 7ns/100ns
Test Condition : 800V, 8A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220 [K]
0
100 in stock
APT11GP60BDQBG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Obsolete
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 41A
Current - Collector Pulsed (Icm) : 45A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 11A
Power - Max : 187W
Switching Energy : 46µJ (on), 90µJ (off)
Input Type : Standard
Gate Charge : 40nC
Td (on/off) @ 25°C : 7ns/29ns
Test Condition : 400V, 11A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247-3
Packaging : Tube
Series : POWER MOS 7®
Part Status : Obsolete
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 41A
Current - Collector Pulsed (Icm) : 45A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 11A
Power - Max : 187W
Switching Energy : 46µJ (on), 90µJ (off)
Input Type : Standard
Gate Charge : 40nC
Td (on/off) @ 25°C : 7ns/29ns
Test Condition : 400V, 11A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247-3
0
100 in stock
APT13GP120KG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Obsolete
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 41A
Current - Collector Pulsed (Icm) : 50A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 13A
Power - Max : 250W
Switching Energy : 114µJ (on), 165µJ (off)
Input Type : Standard
Gate Charge : 55nC
Td (on/off) @ 25°C : 9ns/28ns
Test Condition : 600V, 13A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220 [K]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Obsolete
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 41A
Current - Collector Pulsed (Icm) : 50A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 13A
Power - Max : 250W
Switching Energy : 114µJ (on), 165µJ (off)
Input Type : Standard
Gate Charge : 55nC
Td (on/off) @ 25°C : 9ns/28ns
Test Condition : 600V, 13A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220 [K]
0
100 in stock
APT15GN120KG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Obsolete
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 45A
Current - Collector Pulsed (Icm) : 45A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 15A
Power - Max : 195W
Switching Energy : 410µJ (on), 950µJ (off)
Input Type : Standard
Gate Charge : 90nC
Td (on/off) @ 25°C : 10ns/150ns
Test Condition : 800V, 15A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220 [K]
Packaging : Tube
Series : POWER MOS 7®
Part Status : Obsolete
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 45A
Current - Collector Pulsed (Icm) : 45A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 15A
Power - Max : 195W
Switching Energy : 410µJ (on), 950µJ (off)
Input Type : Standard
Gate Charge : 90nC
Td (on/off) @ 25°C : 10ns/150ns
Test Condition : 800V, 15A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220 [K]
0
100 in stock
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