Welcome to Weijie Semiconductor
- Discrete Semiconductor Products
- Transistors - FETs, MOSFETs - Arrays
Image
Part Number
Manufacturer
Description
Unit Price
In Stock
EPC2103
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 28A
Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 28A
Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
9570 in stock
EPC2103ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 7600pF @ 40V
Power - Max : -
Operating Temperature : -
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 7600pF @ 40V
Power - Max : -
Operating Temperature : -
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
5256 in stock
EPC2104
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
9855 in stock
EPC2104ENG
EPC
Manufacturer : EPC
Packaging : Tray
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Tray
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
100 in stock
EPC2104ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
1427 in stock
EPC2105
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2.5mA, 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V, 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V, 1100pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2.5mA, 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V, 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V, 1100pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
9990 in stock
EPC2105ENG
EPC
Manufacturer : EPC
Packaging : Bulk
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Bulk
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
100 in stock
EPC2105ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 9.5A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 9.5A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
3742 in stock
EPC2106
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A
Rds On (Max) @ Id, Vgs : 70 mOhm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs : 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A
Rds On (Max) @ Id, Vgs : 70 mOhm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs : 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
13272 in stock
EPC2106ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A
Rds On (Max) @ Id, Vgs : 70 mOhm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs : 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A
Rds On (Max) @ Id, Vgs : 70 mOhm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs : 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
19707 in stock
EPC2107
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA
Rds On (Max) @ Id, Vgs : 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 16pF @ 50V, 7pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 9-VFBGA
Supplier Device Package : 9-BGA (1.35x1.35)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA
Rds On (Max) @ Id, Vgs : 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 16pF @ 50V, 7pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 9-VFBGA
Supplier Device Package : 9-BGA (1.35x1.35)
0
19030 in stock
EPC2107ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA
Rds On (Max) @ Id, Vgs : 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 16pF @ 50V, 7pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 9-VFBGA
Supplier Device Package : 9-BGA (1.35x1.35)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA
Rds On (Max) @ Id, Vgs : 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 16pF @ 50V, 7pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 9-VFBGA
Supplier Device Package : 9-BGA (1.35x1.35)
0
100 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
Contact Weijie
- sales@ynnelec.com
- jay@ynnelec.com
- 1132 Nanguang Jiejia Building, No. 3037 Shennan Middle Road, Futian District, Shenzhen
Customer service
Copyright © 2025 Ynnelec. All rights reserved.
webdesign www.wzdzkf.com
Powered by www.wzdzkf.com