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In Stock

EMH2417R-TL-H EMH2417R-TL-H

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual) Common Drain
FET Feature : Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 11A
Rds On (Max) @ Id, Vgs : 10 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id : 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 1.3W
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : SOT-383FL, EMH8
0
100 in stock

EMH2418R-TL-H EMH2418R-TL-H

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual) Common Drain
FET Feature : Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) : 24V
Current - Continuous Drain (Id) @ 25°C : 9A
Rds On (Max) @ Id, Vgs : 15 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id : 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 1.3W
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : SOT-383FL, EMH8
0
3000 in stock

EMH2604-TL-H EMH2604-TL-H

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4A, 3A
Rds On (Max) @ Id, Vgs : 45 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 345pF @ 10V
Power - Max : 1.2W
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : 8-EMH
0
100 in stock

EPC2100 EPC2100

EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs : 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 15V, 1960pF @ 15V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
7544 in stock

EPC2100ENG EPC2100ENG

EPC
Manufacturer : EPC
Packaging : Tray
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs : 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 15V, 1960pF @ 15V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
100 in stock

EPC2100ENGRT EPC2100ENGRT

EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs : 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 15V, 1960pF @ 15V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
6546 in stock

EPC2101 EPC2101

EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 5V, 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 30V, 1200pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
10000 in stock

EPC2101ENG EPC2101ENG

EPC
Manufacturer : EPC
Packaging : Tray
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
100 in stock

EPC2101ENGRT EPC2101ENGRT

EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
7430 in stock

EPC2102 EPC2102

EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
9538 in stock

EPC2102ENG EPC2102ENG

EPC
Manufacturer : EPC
Packaging : Tray
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
100 in stock

EPC2102ENGRT EPC2102ENGRT

EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 23A (Tj)
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
6461 in stock