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Part Number
Manufacturer
Description
Unit Price
In Stock
APTM100DDA35T3G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 22A
Rds On (Max) @ Id, Vgs : 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 5200pF @ 25V
Power - Max : 390W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP3
Supplier Device Package : SP3
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 22A
Rds On (Max) @ Id, Vgs : 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 5200pF @ 25V
Power - Max : 390W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP3
Supplier Device Package : SP3
0
100 in stock
APTM100DU18TG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 43A
Rds On (Max) @ Id, Vgs : 210 mOhm @ 21.5A, 10V
Vgs(th) (Max) @ Id : 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 372nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 10400pF @ 25V
Power - Max : 780W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP4
Supplier Device Package : SP4
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 43A
Rds On (Max) @ Id, Vgs : 210 mOhm @ 21.5A, 10V
Vgs(th) (Max) @ Id : 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 372nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 10400pF @ 25V
Power - Max : 780W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP4
Supplier Device Package : SP4
0
100 in stock
APTM100DUM90G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 78A
Rds On (Max) @ Id, Vgs : 105 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id : 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 744nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 20700pF @ 25V
Power - Max : 1250W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP6
Supplier Device Package : SP6
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 78A
Rds On (Max) @ Id, Vgs : 105 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id : 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 744nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 20700pF @ 25V
Power - Max : 1250W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP6
Supplier Device Package : SP6
0
100 in stock
APTM100H45SCTG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : POWER MOS 7®
Part Status : Active
FET Type : 4 N-Channel (H-Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 18A
Rds On (Max) @ Id, Vgs : 540 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 4350pF @ 25V
Power - Max : 357W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP4
Supplier Device Package : SP4
Packaging : Bulk
Series : POWER MOS 7®
Part Status : Active
FET Type : 4 N-Channel (H-Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 18A
Rds On (Max) @ Id, Vgs : 540 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 4350pF @ 25V
Power - Max : 357W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP4
Supplier Device Package : SP4
0
28 in stock
APTM100H45STG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
FET Type : 4 N-Channel (H-Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 18A
Rds On (Max) @ Id, Vgs : 540 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 4350pF @ 25V
Power - Max : 357W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP4
Supplier Device Package : SP4
Packaging : Bulk
Series : -
Part Status : Active
FET Type : 4 N-Channel (H-Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 18A
Rds On (Max) @ Id, Vgs : 540 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 4350pF @ 25V
Power - Max : 357W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP4
Supplier Device Package : SP4
0
8 in stock
APTM100H80FT1G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : 4 N-Channel (H-Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 11A
Rds On (Max) @ Id, Vgs : 960 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 3876pF @ 25V
Power - Max : 208W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP1
Supplier Device Package : SP1
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : 4 N-Channel (H-Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 11A
Rds On (Max) @ Id, Vgs : 960 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 3876pF @ 25V
Power - Max : 208W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP1
Supplier Device Package : SP1
0
100 in stock
APTM100TDU35PG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : 6 N-Channel (3-Phase Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 22A
Rds On (Max) @ Id, Vgs : 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 5200pF @ 25V
Power - Max : 390W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP6
Supplier Device Package : SP6-P
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : 6 N-Channel (3-Phase Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 22A
Rds On (Max) @ Id, Vgs : 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 5200pF @ 25V
Power - Max : 390W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP6
Supplier Device Package : SP6-P
0
100 in stock
APTM100VDA35T3G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : POWER MOS 7®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 22A
Rds On (Max) @ Id, Vgs : 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 5200pF @ 25V
Power - Max : 390W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP3
Supplier Device Package : SP3
Packaging : Bulk
Series : POWER MOS 7®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 22A
Rds On (Max) @ Id, Vgs : 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 5200pF @ 25V
Power - Max : 390W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP3
Supplier Device Package : SP3
0
100 in stock
APTM10AM02FG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 495A
Rds On (Max) @ Id, Vgs : 2.5 mOhm @ 200A, 10V
Vgs(th) (Max) @ Id : 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 1360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 40000pF @ 25V
Power - Max : 1250W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP6
Supplier Device Package : SP6
Packaging : Bulk
Series : -
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 495A
Rds On (Max) @ Id, Vgs : 2.5 mOhm @ 200A, 10V
Vgs(th) (Max) @ Id : 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 1360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 40000pF @ 25V
Power - Max : 1250W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP6
Supplier Device Package : SP6
0
100 in stock
APTM10DDAM09T3G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 139A
Rds On (Max) @ Id, Vgs : 10 mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 9875pF @ 25V
Power - Max : 390W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP3
Supplier Device Package : SP3
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 139A
Rds On (Max) @ Id, Vgs : 10 mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 9875pF @ 25V
Power - Max : 390W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP3
Supplier Device Package : SP3
0
100 in stock
APTM10DDAM19T3G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 70A
Rds On (Max) @ Id, Vgs : 21 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 5100pF @ 25V
Power - Max : 208W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP3
Supplier Device Package : SP3
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 70A
Rds On (Max) @ Id, Vgs : 21 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 5100pF @ 25V
Power - Max : 208W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP3
Supplier Device Package : SP3
0
100 in stock
APTM10DHM09T3G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : POWER MOS V®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual) Asymmetrical
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 139A
Rds On (Max) @ Id, Vgs : 10 mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 9875pF @ 25V
Power - Max : 390W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP3
Supplier Device Package : SP3
Packaging : Bulk
Series : POWER MOS V®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual) Asymmetrical
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 139A
Rds On (Max) @ Id, Vgs : 10 mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 9875pF @ 25V
Power - Max : 390W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP3
Supplier Device Package : SP3
0
100 in stock
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