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Part Number
Manufacturer
Description
Unit Price
In Stock
TPCL4201(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 10V
Power - Max : 500mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 4-XFLGA
Supplier Device Package : 4-Chip LGA (1.59x1.59)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 10V
Power - Max : 500mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 4-XFLGA
Supplier Device Package : 4-Chip LGA (1.59x1.59)
0
100 in stock
TPCL4202(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 10V
Power - Max : 500mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 4-XFLGA
Supplier Device Package : 4-Chip LGA (1.59x1.59)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 10V
Power - Max : 500mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 4-XFLGA
Supplier Device Package : 4-Chip LGA (1.59x1.59)
0
100 in stock
TPCL4203(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 685pF @ 10V
Power - Max : 500mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 4-XFLGA
Supplier Device Package : 4-Chip LGA (1.59x1.59)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 685pF @ 10V
Power - Max : 500mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 4-XFLGA
Supplier Device Package : 4-Chip LGA (1.59x1.59)
0
100 in stock
TPCP8203(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 4.7A
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 360mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : PS-8 (2.9x2.4)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 4.7A
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 360mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : PS-8 (2.9x2.4)
0
100 in stock
TPCP8401(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V, 12V
Current - Continuous Drain (Id) @ 25°C : 100mA, 5.5A
Rds On (Max) @ Id, Vgs : 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 9.3pF @ 3V
Power - Max : 1W
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : PS-8 (2.9x2.4)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V, 12V
Current - Continuous Drain (Id) @ 25°C : 100mA, 5.5A
Rds On (Max) @ Id, Vgs : 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 9.3pF @ 3V
Power - Max : 1W
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : PS-8 (2.9x2.4)
0
100 in stock
TPD3215M
Transphorm
Manufacturer : Transphorm
Packaging : Bulk
Series : -
Part Status : Last Time Buy
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 70A (Tc)
Rds On (Max) @ Id, Vgs : 34 mOhm @ 30A, 8V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds : 2260pF @ 100V
Power - Max : 470W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : Module
Supplier Device Package : Module
Packaging : Bulk
Series : -
Part Status : Last Time Buy
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 70A (Tc)
Rds On (Max) @ Id, Vgs : 34 mOhm @ 30A, 8V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds : 2260pF @ 100V
Power - Max : 470W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : Module
Supplier Device Package : Module
0
77 in stock
TPIC1502DW
Luminary Micro / Texas Instruments
Manufacturer : Texas Instruments
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 1.5A
Rds On (Max) @ Id, Vgs : 300 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 2.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 98pF @ 14V
Power - Max : 2.86W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package : 24-SOIC
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : -
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 1.5A
Rds On (Max) @ Id, Vgs : 300 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 2.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 98pF @ 14V
Power - Max : 2.86W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package : 24-SOIC
0
100 in stock
TPS1120D
Luminary Micro / Texas Instruments
Manufacturer : Texas Instruments
Packaging : Tube
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 15V
Current - Continuous Drain (Id) @ 25°C : 1.17A
Rds On (Max) @ Id, Vgs : 180 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 840mW
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOIC
Packaging : Tube
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 15V
Current - Continuous Drain (Id) @ 25°C : 1.17A
Rds On (Max) @ Id, Vgs : 180 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 840mW
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOIC
0
100 in stock
TPS1120DR
Luminary Micro / Texas Instruments
Manufacturer : Texas Instruments
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 15V
Current - Continuous Drain (Id) @ 25°C : 1.17A
Rds On (Max) @ Id, Vgs : 180 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 840mW
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOIC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 15V
Current - Continuous Drain (Id) @ 25°C : 1.17A
Rds On (Max) @ Id, Vgs : 180 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 840mW
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOIC
0
1185 in stock
TSM200N03DPQ33 RGG
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Cut Tape (CT)
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Rds On (Max) @ Id, Vgs : 20 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 345pF @ 25V
Power - Max : 20W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerWDFN
Supplier Device Package : 8-PDFN (3x3)
Packaging : Cut Tape (CT)
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Rds On (Max) @ Id, Vgs : 20 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 345pF @ 25V
Power - Max : 20W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerWDFN
Supplier Device Package : 8-PDFN (3x3)
0
4339 in stock
TSM250N02DCQ RFG
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.8A (Tc)
Rds On (Max) @ Id, Vgs : 25 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id : 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 775pF @ 10V
Power - Max : 620mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-VDFN Exposed Pad
Supplier Device Package : 6-TDFN (2x2)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.8A (Tc)
Rds On (Max) @ Id, Vgs : 25 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id : 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 775pF @ 10V
Power - Max : 620mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-VDFN Exposed Pad
Supplier Device Package : 6-TDFN (2x2)
0
14670 in stock
TSM2537CQ RFG
Taiwan Semiconductor
Manufacturer : Taiwan Semiconductor Corporation
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 11.6A (Tc), 9A (Tc)
Rds On (Max) @ Id, Vgs : 30 mOhm @ 6.4A, 4.5V, 55 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.1nC @ 4.5V, 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 677pF @ 10V, 744pF @ 10V
Power - Max : 6.25W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-VDFN Exposed Pad
Supplier Device Package : 6-TDFN (2x2)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 11.6A (Tc), 9A (Tc)
Rds On (Max) @ Id, Vgs : 30 mOhm @ 6.4A, 4.5V, 55 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.1nC @ 4.5V, 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 677pF @ 10V, 744pF @ 10V
Power - Max : 6.25W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-VDFN Exposed Pad
Supplier Device Package : 6-TDFN (2x2)
0
5079 in stock
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