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In Stock
.jpg "Show details for TPC8207(TE12L)")
TPC8207(TE12L)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Digi-Reel®
Series : -
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6A
Rds On (Max) @ Id, Vgs : 20 mOhm @ 4.8A, 4V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 2010pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
Packaging : Digi-Reel®
Series : -
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6A
Rds On (Max) @ Id, Vgs : 20 mOhm @ 4.8A, 4V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 2010pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
0
100 in stock
.jpg "Show details for TPC8207(TE12L,Q)")
TPC8207(TE12L,Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6A
Rds On (Max) @ Id, Vgs : 20 mOhm @ 4.8A, 4V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 2010pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6A
Rds On (Max) @ Id, Vgs : 20 mOhm @ 4.8A, 4V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 2010pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
0
100 in stock
.jpg "Show details for TPC8208(TE12L,Q)")
TPC8208(TE12L,Q)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Digi-Reel®
Series : -
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.5A, 4V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 9.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
Packaging : Digi-Reel®
Series : -
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.5A, 4V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 9.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
0
100 in stock
.jpg "Show details for TPC8208(TE12L,Q,M)")
TPC8208(TE12L,Q,M)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.5A, 4V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 9.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.5A, 4V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 9.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
0
100 in stock
.jpg "Show details for TPC8211(TE12L,Q,M)")
TPC8211(TE12L,Q,M)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.5A
Rds On (Max) @ Id, Vgs : 36 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1250pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.5A
Rds On (Max) @ Id, Vgs : 36 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1250pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
0
100 in stock
TPC8212-H(TE12LQ,M
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6A
Rds On (Max) @ Id, Vgs : 21 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 840pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6A
Rds On (Max) @ Id, Vgs : 21 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 840pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
0
100 in stock
TPC8213-H(TE12LQ,M
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 5A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 625pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 5A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 625pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
0
100 in stock
TPC8221-H,LQ(S
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6A
Rds On (Max) @ Id, Vgs : 25 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOP
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6A
Rds On (Max) @ Id, Vgs : 25 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOP
0
100 in stock
.jpg "Show details for TPC8405(TE12L,Q,M)")
TPC8405(TE12L,Q,M)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6A, 4.5A
Rds On (Max) @ Id, Vgs : 26 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1240pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6A, 4.5A
Rds On (Max) @ Id, Vgs : 26 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1240pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
0
100 in stock
TPCF8201(TE85L,F,M
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 3A
Rds On (Max) @ Id, Vgs : 49 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 590pF @ 10V
Power - Max : 330mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : VS-8 (2.9x1.5)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 3A
Rds On (Max) @ Id, Vgs : 49 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 590pF @ 10V
Power - Max : 330mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : VS-8 (2.9x1.5)
0
100 in stock
TPCF8304(TE85L,F,M
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.2A
Rds On (Max) @ Id, Vgs : 72 mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id : 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
Power - Max : 330mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : VS-8 (2.9x1.5)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.2A
Rds On (Max) @ Id, Vgs : 72 mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id : 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 10V
Power - Max : 330mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : VS-8 (2.9x1.5)
0
100 in stock
TPCF8402(TE85L,F,M
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A, 3.2A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 470pF @ 10V
Power - Max : 330mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : VS-8 (2.9x1.5)
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A, 3.2A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 470pF @ 10V
Power - Max : 330mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : VS-8 (2.9x1.5)
0
100 in stock
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