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Part Number
Manufacturer
Description
Unit Price
In Stock
SSM6N57NU,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A
Rds On (Max) @ Id, Vgs : 46 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 310pF @ 10V
Power - Max : 1W
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-µDFN(2x2)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A
Rds On (Max) @ Id, Vgs : 46 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 310pF @ 10V
Power - Max : 1W
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-µDFN(2x2)
0
15250 in stock
SSM6N58NU,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A
Rds On (Max) @ Id, Vgs : 84 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 129pF @ 15V
Power - Max : 1W
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-UDFN (2x2)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A
Rds On (Max) @ Id, Vgs : 84 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 129pF @ 15V
Power - Max : 1W
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-UDFN (2x2)
0
8276 in stock
SSM6N61NU,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4A
Rds On (Max) @ Id, Vgs : 33 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 410pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-UDFNB (2x2)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4A
Rds On (Max) @ Id, Vgs : 33 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 410pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-UDFNB (2x2)
0
4658 in stock
SSM6N67NU,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Rds On (Max) @ Id, Vgs : 39.1 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 310pF @ 15V
Power - Max : 2W (Ta)
Operating Temperature : 150°C
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-UDFN (2x2)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Rds On (Max) @ Id, Vgs : 39.1 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 310pF @ 15V
Power - Max : 2W (Ta)
Operating Temperature : 150°C
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-UDFN (2x2)
0
2975 in stock
SSM6N68NU,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Rds On (Max) @ Id, Vgs : 84 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 129pF @ 15V
Power - Max : 2W (Ta)
Operating Temperature : 150°C
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-UDFN (2x2)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Rds On (Max) @ Id, Vgs : 84 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 129pF @ 15V
Power - Max : 2W (Ta)
Operating Temperature : 150°C
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-UDFN (2x2)
0
3000 in stock
SSM6N7002BFE(T5L,F
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 200mA
Rds On (Max) @ Id, Vgs : 2.1 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 17pF @ 25V
Power - Max : 150mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6 (1.6x1.6)
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 200mA
Rds On (Max) @ Id, Vgs : 2.1 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 17pF @ 25V
Power - Max : 150mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6 (1.6x1.6)
0
100 in stock
SSM6N7002BFE,LM
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 200mA
Rds On (Max) @ Id, Vgs : 2.1 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 17pF @ 25V
Power - Max : 150mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 200mA
Rds On (Max) @ Id, Vgs : 2.1 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 17pF @ 25V
Power - Max : 150mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
0
4257 in stock
SSM6N7002BFU(T5L,F
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 200mA
Rds On (Max) @ Id, Vgs : 2.1 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 17pF @ 25V
Power - Max : 300mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Cut Tape (CT)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 200mA
Rds On (Max) @ Id, Vgs : 2.1 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 17pF @ 25V
Power - Max : 300mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
SSM6N7002BFU,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 200mA
Rds On (Max) @ Id, Vgs : 2.1 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 17pF @ 25V
Power - Max : 300mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 200mA
Rds On (Max) @ Id, Vgs : 2.1 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 17pF @ 25V
Power - Max : 300mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
SSM6N7002CFU,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 170mA
Rds On (Max) @ Id, Vgs : 3.9 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 17pF @ 10V
Power - Max : 285mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 170mA
Rds On (Max) @ Id, Vgs : 3.9 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 17pF @ 10V
Power - Max : 285mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
71431 in stock
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 300mA
Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 40pF @ 10V
Power - Max : 285mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 300mA
Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 40pF @ 10V
Power - Max : 285mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
29800 in stock
SSM6N815R,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 15V
Power - Max : 1.8W (Ta)
Operating Temperature : 150°C
Mounting Type : Surface Mount
Package / Case : 6-SMD, Flat Leads
Supplier Device Package : 6-TSOP-F
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 15V
Power - Max : 1.8W (Ta)
Operating Temperature : 150°C
Mounting Type : Surface Mount
Package / Case : 6-SMD, Flat Leads
Supplier Device Package : 6-TSOP-F
0
2870 in stock
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