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Part Number
Manufacturer
Description
Unit Price
In Stock

SSM6L16FETE85LF SSM6L16FETE85LF

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Not For New Designs
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 100mA
Rds On (Max) @ Id, Vgs : 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.1V @ 0.1mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 9.3pF @ 3V
Power - Max : 150mW
Operating Temperature : 150°C (TA)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6 (1.6x1.6)
0
100 in stock

SSM6L35FE,LM SSM6L35FE,LM

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 180mA, 100mA
Rds On (Max) @ Id, Vgs : 3 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 9.5pF @ 3V
Power - Max : 150mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6 (1.6x1.6)
0
100 in stock

SSM6L35FU(TE85L,F) SSM6L35FU(TE85L,F)

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
FET Type : N and P-Channel
FET Feature : Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 180mA, 100mA
Rds On (Max) @ Id, Vgs : 3 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 9.5pF @ 3V
Power - Max : 200mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
533 in stock

SSM6L36FE,LM SSM6L36FE,LM

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 500mA, 330mA
Rds On (Max) @ Id, Vgs : 630 mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds : 46pF @ 10V
Power - Max : 150mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6 (1.6x1.6)
0
6700 in stock

SSM6L39TU,LF SSM6L39TU,LF

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
FET Type : N and P-Channel
FET Feature : Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 800mA
Rds On (Max) @ Id, Vgs : 143 mOhm @ 600MA, 4V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 268pF @ 10V
Power - Max : 500mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-SMD, Flat Leads
Supplier Device Package : UF6
0
100 in stock

SSM6L61NU,LF SSM6L61NU,LF

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4A
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : -
Operating Temperature : -
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-UDFN (2x2)
0
2945 in stock

SSM6N15AFE,LM SSM6N15AFE,LM

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA
Rds On (Max) @ Id, Vgs : 4 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 7.8pF @ 3V
Power - Max : 150mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6 (1.6x1.6)
0
100 in stock

SSM6N15AFU,LF SSM6N15AFU,LF

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA
Rds On (Max) @ Id, Vgs : 3.6 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 13.5pF @ 3V
Power - Max : 300mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
2029 in stock

SSM6N16FUTE85LF SSM6N16FUTE85LF

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 100mA
Rds On (Max) @ Id, Vgs : 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 9.3pF @ 3V
Power - Max : 200mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
5794 in stock

SSM6N357R,LF SSM6N357R,LF

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 650mA (Ta)
Rds On (Max) @ Id, Vgs : 1.8 Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 12V
Power - Max : 1.5W (Ta)
Operating Temperature : 150°C
Mounting Type : Surface Mount
Package / Case : 6-SMD, Flat Leads
Supplier Device Package : 6-TSOP-F
0
100 in stock

SSM6N35AFE,LF SSM6N35AFE,LF

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 250mA (Ta)
Rds On (Max) @ Id, Vgs : 1.1 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id : 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 36pF @ 10V
Power - Max : 250mW
Operating Temperature : 150°C
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
0
7854 in stock

SSM6N35AFU,LF SSM6N35AFU,LF

Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 250mA (Ta)
Rds On (Max) @ Id, Vgs : 1.1 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id : 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 36pF @ 10V
Power - Max : 285mW (Ta)
Operating Temperature : 150°C
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
5975 in stock