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Part Number
Manufacturer
Description
Unit Price
In Stock
SQ4917EY-T1_GE3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Rds On (Max) @ Id, Vgs : 48 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1910pF @ 30V
Power - Max : 5W (Tc)
Operating Temperature : -55°C ~ 175°C (TA)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Rds On (Max) @ Id, Vgs : 48 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1910pF @ 30V
Power - Max : 5W (Tc)
Operating Temperature : -55°C ~ 175°C (TA)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
773 in stock
SQ4920EY-T1_GE3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1465pF @ 15V
Power - Max : 4.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1465pF @ 15V
Power - Max : 4.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
SQ4940AEY-T1_GE3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 24 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 741pF @ 20V
Power - Max : 4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : -
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 24 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 741pF @ 20V
Power - Max : 4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : -
0
955 in stock
SQ4946AEY-T1_GE3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 7A
Rds On (Max) @ Id, Vgs : 40 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 750pF @ 25V
Power - Max : 4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 7A
Rds On (Max) @ Id, Vgs : 40 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 750pF @ 25V
Power - Max : 4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
1221 in stock
SQ4946EY-T1-E3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tape & Reel (TR)
Series : TrenchFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 4.5A
Rds On (Max) @ Id, Vgs : 55 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : TrenchFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 4.5A
Rds On (Max) @ Id, Vgs : 55 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
SQ4961EY-T1_GE3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 4.4A (Tc)
Rds On (Max) @ Id, Vgs : 85 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1140pF @ 25V
Power - Max : 3.3W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 4.4A (Tc)
Rds On (Max) @ Id, Vgs : 85 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1140pF @ 25V
Power - Max : 3.3W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
2138 in stock
SQ9945AEY-T1-E3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tape & Reel (TR)
Series : TrenchFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 3.7A
Rds On (Max) @ Id, Vgs : 80 mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : TrenchFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 3.7A
Rds On (Max) @ Id, Vgs : 80 mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
SQ9945BEY-T1_GE3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 5.4A
Rds On (Max) @ Id, Vgs : 64 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 470pF @ 25V
Power - Max : 4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 5.4A
Rds On (Max) @ Id, Vgs : 64 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 470pF @ 25V
Power - Max : 4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
2468 in stock
SQJ200EP-T1_GE3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 20A, 60A
Rds On (Max) @ Id, Vgs : 8.8 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 975pF @ 10V
Power - Max : 27W, 48W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SO-8 Dual
Supplier Device Package : PowerPAK® SO-8 Dual Asymmetric
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 20A, 60A
Rds On (Max) @ Id, Vgs : 8.8 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 975pF @ 10V
Power - Max : 27W, 48W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SO-8 Dual
Supplier Device Package : PowerPAK® SO-8 Dual Asymmetric
0
3453 in stock
SQJ202EP-T1_GE3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 20A, 60A
Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 975pF @ 6V
Power - Max : 27W, 48W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SO-8 Dual
Supplier Device Package : PowerPAK® SO-8 Dual Asymmetric
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 20A, 60A
Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 975pF @ 6V
Power - Max : 27W, 48W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SO-8 Dual
Supplier Device Package : PowerPAK® SO-8 Dual Asymmetric
0
1876 in stock
SQJ204EP-T1_GE3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual) Asymmetrical
FET Feature : Standard
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs : 8.3 mOhm @ 4A, 10V, 3 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V, 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 6V, 3700pF @ 6V
Power - Max : 27W (Tc), 48W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SO-8 Dual
Supplier Device Package : PowerPAK® SO-8 Dual Asymmetric
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual) Asymmetrical
FET Feature : Standard
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs : 8.3 mOhm @ 4A, 10V, 3 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V, 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 6V, 3700pF @ 6V
Power - Max : 27W (Tc), 48W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SO-8 Dual
Supplier Device Package : PowerPAK® SO-8 Dual Asymmetric
0
50 in stock
SQJ244EP-T1_GE3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual) Asymmetrical
FET Feature : Standard
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs : 11 mOhm @ 4A, 10V, 4.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 25V, 2800pF @ 25V
Power - Max : 27W (Tc), 48W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SO-8 Dual
Supplier Device Package : PowerPAK® SO-8 Dual Asymmetric
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual) Asymmetrical
FET Feature : Standard
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs : 11 mOhm @ 4A, 10V, 4.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 25V, 2800pF @ 25V
Power - Max : 27W (Tc), 48W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SO-8 Dual
Supplier Device Package : PowerPAK® SO-8 Dual Asymmetric
0
50 in stock
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