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Part Number
Manufacturer
Description
Unit Price
In Stock
IRF7351TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 17.8 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1330pF @ 30V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 17.8 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1330pF @ 30V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
14 in stock
IRF7379
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.8A, 4.3A
Rds On (Max) @ Id, Vgs : 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.8A, 4.3A
Rds On (Max) @ Id, Vgs : 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7379PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.8A, 4.3A
Rds On (Max) @ Id, Vgs : 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.8A, 4.3A
Rds On (Max) @ Id, Vgs : 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7379QTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.8A, 4.3A
Rds On (Max) @ Id, Vgs : 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.8A, 4.3A
Rds On (Max) @ Id, Vgs : 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7379TR
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.8A, 4.3A
Rds On (Max) @ Id, Vgs : 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.8A, 4.3A
Rds On (Max) @ Id, Vgs : 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7379TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.8A, 4.3A
Rds On (Max) @ Id, Vgs : 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.8A, 4.3A
Rds On (Max) @ Id, Vgs : 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
3018 in stock
IRF7380PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 3.6A
Rds On (Max) @ Id, Vgs : 73 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 3.6A
Rds On (Max) @ Id, Vgs : 73 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7380QTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 3.6A
Rds On (Max) @ Id, Vgs : 73 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 3.6A
Rds On (Max) @ Id, Vgs : 73 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7380TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 3.6A
Rds On (Max) @ Id, Vgs : 73 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 3.6A
Rds On (Max) @ Id, Vgs : 73 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
1278 in stock
IRF7389
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7389PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
1791 in stock
IRF7389TR
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 25V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
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