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Part Number
Manufacturer
Description
Unit Price
In Stock
IRF7338PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 6.3A, 3A
Rds On (Max) @ Id, Vgs : 34 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 640pF @ 9V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 6.3A, 3A
Rds On (Max) @ Id, Vgs : 34 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 640pF @ 9V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7338TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 6.3A, 3A
Rds On (Max) @ Id, Vgs : 34 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 640pF @ 9V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 6.3A, 3A
Rds On (Max) @ Id, Vgs : 34 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 640pF @ 9V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7341PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 4.7A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 740pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 4.7A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 740pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
2724 in stock
IRF7341QTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 5.1A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 25V
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 5.1A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 25V
Power - Max : 2.4W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7341TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 4.7A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 740pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Alternate Packaging
Series : HEXFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 4.7A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 740pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
33843 in stock
IRF7342PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 3.4A
Rds On (Max) @ Id, Vgs : 105 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 690pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 3.4A
Rds On (Max) @ Id, Vgs : 105 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 690pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
3512 in stock
IRF7342QTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 3.4A
Rds On (Max) @ Id, Vgs : 105 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 690pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 3.4A
Rds On (Max) @ Id, Vgs : 105 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 690pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7343PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 4.7A, 3.4A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 740pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 4.7A, 3.4A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 740pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
699 in stock
IRF7343QTRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 4.7A, 3.4A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 740pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Cut Tape (CT)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 4.7A, 3.4A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 740pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7350PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 2.1A, 1.5A
Rds On (Max) @ Id, Vgs : 210 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 2.1A, 1.5A
Rds On (Max) @ Id, Vgs : 210 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7350TRPBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 2.1A, 1.5A
Rds On (Max) @ Id, Vgs : 210 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tape & Reel (TR)
Series : HEXFET®
Part Status : Obsolete
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 2.1A, 1.5A
Rds On (Max) @ Id, Vgs : 210 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 25V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
IRF7351PBF
International Rectifier (Infineon Technologies)
Manufacturer : Infineon Technologies
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 17.8 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1330pF @ 30V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
Packaging : Tube
Alternate Packaging
Series : HEXFET®
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 17.8 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1330pF @ 30V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
0
100 in stock
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