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Part Number
Manufacturer
Description
Unit Price
In Stock
HN1B04FU-Y,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 150MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 150MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
5955 in stock
HN1C01FE-GR,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 80MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 80MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
0
4493 in stock
HN1C01FE-Y,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 80MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 80MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
0
4342 in stock
HN1C01F-GR(TE85L,F
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 300mW
Frequency - Transition : 800MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 300mW
Frequency - Transition : 800MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6
0
63 in stock
HN1C01FU-GR,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
HN1C01FU-Y(T5L,F,T
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
HN1C01FYTE85LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 300mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 300mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6
0
739 in stock
.jpg "Show details for HN1C03F-B(TE85L,F)")
HN1C03F-B(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 300mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 350 @ 4mA, 2V
Power - Max : 300mW
Frequency - Transition : 30MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 300mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 350 @ 4mA, 2V
Power - Max : 300mW
Frequency - Transition : 30MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6
0
100 in stock
HN1C03FU-A(TE85L,F
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 300mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 4mA, 2V
Power - Max : 200mW
Frequency - Transition : 30MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 300mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 4mA, 2V
Power - Max : 200mW
Frequency - Transition : 30MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
HN2A01FE-GR(TE85LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 800MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 800MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
0
100 in stock
HN2A01FE-Y(TE85L,F
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 80MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 80MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
0
100 in stock
HN2A01FU-GR(TE85LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
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