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Part Number
Manufacturer
Description
Unit Price
In Stock
HN1A01FU-Y,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
1934 in stock
.jpg "Show details for HN1A01F-Y(TE85L,F)")
HN1A01F-Y(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 300mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 300mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6
0
2990 in stock
HN1B01FDW1T1
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 200mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 380mW
Frequency - Transition : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SC-74
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 200mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 380mW
Frequency - Transition : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SC-74
0
100 in stock
HN1B01FDW1T1G
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 200mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 380mW
Frequency - Transition : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SC-74
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 200mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 380mW
Frequency - Transition : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SC-74
0
8990 in stock
HN1B01F-GR(TE85L,F
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 300mW
Frequency - Transition : 120MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 300mW
Frequency - Transition : 120MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6
0
100 in stock
HN1B01FU-GR,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 200mW, 210mW
Frequency - Transition : 150MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 200mW, 210mW
Frequency - Transition : 150MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
.jpg "Show details for HN1B01FU-Y(L,F,T)")
HN1B01FU-Y(L,F,T)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 120MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 120MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
.jpg "Show details for HN1B04F(TE85L,F)")
HN1B04F(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 30V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 100mA, 1V
Power - Max : 300mW
Frequency - Transition : 200MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 30V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 100mA, 1V
Power - Max : 300mW
Frequency - Transition : 200MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6
0
100 in stock
HN1B04FE-GR,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 80MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 80MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
0
100 in stock
HN1B04FE-Y,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 80MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 80MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
0
1738 in stock
HN1B04FU-GR,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 150MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 150MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
HN1B04FU-Y(T5L,F,T
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 150MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 150MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
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