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Wolfspeed
- Cree’s power and RF division is now known as Wolfspeed, A Cree Company. Wolfspeed is liberating power and wireless systems from the limitations of silicon by leading the innovation and commercialization of next-generation systems based on silicon carbide and gallium nitride.
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Part Number
Manufacturer
Description
Unit Price
In Stock
C2D05120A
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : Zero Recovery™
Part Status : Obsolete
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 17.5A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 200µA @ 1200V
Capacitance @ Vr, F : 455pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220-2
Operating Temperature - Junction : -55°C ~ 175°C
Packaging : Tube
Series : Zero Recovery™
Part Status : Obsolete
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 17.5A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 200µA @ 1200V
Capacitance @ Vr, F : 455pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220-2
Operating Temperature - Junction : -55°C ~ 175°C
0
596 in stock
C2D10120D
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : Zero Recovery™
Part Status : Obsolete
Diode Configuration : 1 Pair Common Cathode
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) (per Diode) : 10A
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 200µA @ 1200V
Operating Temperature - Junction : -55°C ~ 175°C
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247-3
Packaging : Tube
Series : Zero Recovery™
Part Status : Obsolete
Diode Configuration : 1 Pair Common Cathode
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) (per Diode) : 10A
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 200µA @ 1200V
Operating Temperature - Junction : -55°C ~ 175°C
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247-3
0
28 in stock
C2M0025120D
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : Z-FET™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 34 mOhm @ 50A, 20V
Vgs(th) (Max) @ Id : 2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 161nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 2788pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 463W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
Packaging : Tube
Series : Z-FET™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 34 mOhm @ 50A, 20V
Vgs(th) (Max) @ Id : 2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 161nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 2788pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 463W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
0
454 in stock
C2M0040120D
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : Z-FET™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 52 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id : 2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 115nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 1893pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 330W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
Packaging : Tube
Series : Z-FET™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 52 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id : 2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 115nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 1893pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 330W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
0
100 in stock
C2M0045170D
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : C2M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 70 mOhm @ 50A, 20V
Vgs(th) (Max) @ Id : 4V @ 18mA
Gate Charge (Qg) (Max) @ Vgs : 188nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 3672pF @ 1kV
FET Feature : -
Power Dissipation (Max) : 520W (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
Packaging : Tube
Series : C2M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 70 mOhm @ 50A, 20V
Vgs(th) (Max) @ Id : 4V @ 18mA
Gate Charge (Qg) (Max) @ Vgs : 188nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 3672pF @ 1kV
FET Feature : -
Power Dissipation (Max) : 520W (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
0
1193 in stock
C2M0045170P
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : C2M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 59 mOhm @ 50A, 20V
Vgs(th) (Max) @ Id : 4V @ 18mA
Gate Charge (Qg) (Max) @ Vgs : 188nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 3672pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 520W (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-4L
Package / Case : TO-247-4
Packaging : Tube
Series : C2M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 59 mOhm @ 50A, 20V
Vgs(th) (Max) @ Id : 4V @ 18mA
Gate Charge (Qg) (Max) @ Vgs : 188nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 3672pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 520W (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-4L
Package / Case : TO-247-4
0
100 in stock
C2M0080120D
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Bulk
Series : C2M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 98 mOhm @ 20A, 20V
Vgs(th) (Max) @ Id : 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 62nC @ 5V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 192W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
Packaging : Bulk
Series : C2M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 98 mOhm @ 20A, 20V
Vgs(th) (Max) @ Id : 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 62nC @ 5V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 192W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
0
822 in stock
C2M0080170P
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : C2M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 125 mOhm @ 28A, 20V
Vgs(th) (Max) @ Id : 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 120nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 2250pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 277W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-4L
Package / Case : TO-247-4
Packaging : Tube
Series : C2M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 125 mOhm @ 28A, 20V
Vgs(th) (Max) @ Id : 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 120nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 2250pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 277W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-4L
Package / Case : TO-247-4
0
28 in stock
C2M0160120D
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : Z-FET™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 196 mOhm @ 10A, 20V
Vgs(th) (Max) @ Id : 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 32.6nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 527pF @ 800V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
Packaging : Tube
Series : Z-FET™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 196 mOhm @ 10A, 20V
Vgs(th) (Max) @ Id : 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 32.6nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 527pF @ 800V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
0
3207 in stock
C2M0280120D
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : Z-FET™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 370 mOhm @ 6A, 20V
Vgs(th) (Max) @ Id : 2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs : 20.4nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 259pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 62.5W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
Packaging : Tube
Series : Z-FET™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 370 mOhm @ 6A, 20V
Vgs(th) (Max) @ Id : 2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs : 20.4nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 259pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 62.5W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
0
6299 in stock
C2M1000170D
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : Z-FET™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 1.1 Ohm @ 2A, 20V
Vgs(th) (Max) @ Id : 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 13nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 191pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 69W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
Packaging : Tube
Series : Z-FET™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 1.1 Ohm @ 2A, 20V
Vgs(th) (Max) @ Id : 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 13nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 191pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 69W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
0
100 in stock
C2M1000170J
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Bulk
Series : C2M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 2A, 20V
Vgs(th) (Max) @ Id : 3.1V @ 500µA (Typ)
Gate Charge (Qg) (Max) @ Vgs : 13nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 200pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 78W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK (7-Lead)
Package / Case : TO-263-7 (Straight Leads)
Packaging : Bulk
Series : C2M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 2A, 20V
Vgs(th) (Max) @ Id : 3.1V @ 500µA (Typ)
Gate Charge (Qg) (Max) @ Vgs : 13nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 200pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 78W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK (7-Lead)
Package / Case : TO-263-7 (Straight Leads)
0
711 in stock
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