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Wolfspeed
- Cree’s power and RF division is now known as Wolfspeed, A Cree Company. Wolfspeed is liberating power and wireless systems from the limitations of silicon by leading the innovation and commercialization of next-generation systems based on silicon carbide and gallium nitride.
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Part Number
Manufacturer
Description
Unit Price
In Stock
C3D20065D
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : Z-Rec®
Part Status : Active
Diode Configuration : 1 Pair Common Cathode
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) (per Diode) : 10A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 10A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 60µA @ 650V
Operating Temperature - Junction : -55°C ~ 175°C
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247-3
Packaging : Tube
Series : Z-Rec®
Part Status : Active
Diode Configuration : 1 Pair Common Cathode
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) (per Diode) : 10A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 10A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 60µA @ 650V
Operating Temperature - Junction : -55°C ~ 175°C
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247-3
0
100 in stock
C3D25170H
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : Z-Rec®
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1700V
Current - Average Rectified (Io) : 26.3A (DC)
Voltage - Forward (Vf) (Max) @ If : 2.5V @ 25A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 100µA @ 1700V
Capacitance @ Vr, F : 2079pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-247-2
Supplier Device Package : TO-247-2
Operating Temperature - Junction : -55°C ~ 175°C
Packaging : Tube
Series : Z-Rec®
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1700V
Current - Average Rectified (Io) : 26.3A (DC)
Voltage - Forward (Vf) (Max) @ If : 2.5V @ 25A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 100µA @ 1700V
Capacitance @ Vr, F : 2079pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-247-2
Supplier Device Package : TO-247-2
Operating Temperature - Junction : -55°C ~ 175°C
0
2043 in stock
C3D30065D
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : Z-Rec®
Part Status : Active
Diode Configuration : 1 Pair Common Cathode
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) (per Diode) : 39A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 16A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 95µA @ 650V
Operating Temperature - Junction : -55°C ~ 175°C
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247-3
Packaging : Tube
Series : Z-Rec®
Part Status : Active
Diode Configuration : 1 Pair Common Cathode
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) (per Diode) : 39A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 16A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 95µA @ 650V
Operating Temperature - Junction : -55°C ~ 175°C
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247-3
0
100 in stock
C3M0030090K
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 39 mOhm @ 35A, 15V
Vgs(th) (Max) @ Id : 3.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs : 87nC @ 15V
Vgs (Max) : +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1864pF @ 600V
FET Feature : -
Power Dissipation (Max) : 149W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-4L
Package / Case : TO-247-4
Packaging : Tube
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 39 mOhm @ 35A, 15V
Vgs(th) (Max) @ Id : 3.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs : 87nC @ 15V
Vgs (Max) : +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1864pF @ 600V
FET Feature : -
Power Dissipation (Max) : 149W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-4L
Package / Case : TO-247-4
0
100 in stock
C3M0065090D
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 78 mOhm @ 20A, 15V
Vgs(th) (Max) @ Id : 2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 30.4nC @ 15V
Vgs (Max) : +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 600V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
Packaging : Tube
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 78 mOhm @ 20A, 15V
Vgs(th) (Max) @ Id : 2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 30.4nC @ 15V
Vgs (Max) : +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 600V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
0
100 in stock
C3M0065090J
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Alternate Packaging
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 78 mOhm @ 20A, 15V
Vgs(th) (Max) @ Id : 2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 15V
Vgs (Max) : +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 600V
FET Feature : -
Power Dissipation (Max) : 113W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK-7
Package / Case : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging : Tube
Alternate Packaging
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 78 mOhm @ 20A, 15V
Vgs(th) (Max) @ Id : 2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 15V
Vgs (Max) : +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 600V
FET Feature : -
Power Dissipation (Max) : 113W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK-7
Package / Case : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
0
2 in stock
C3M0065100J
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Alternate Packaging
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 78 mOhm @ 20A, 15V
Vgs(th) (Max) @ Id : 3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 15V
Vgs (Max) : +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 600V
FET Feature : -
Power Dissipation (Max) : 113.5W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK-7
Package / Case : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging : Tube
Alternate Packaging
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 78 mOhm @ 20A, 15V
Vgs(th) (Max) @ Id : 3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 15V
Vgs (Max) : +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 600V
FET Feature : -
Power Dissipation (Max) : 113.5W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK-7
Package / Case : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
0
100 in stock
C3M0065100K
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 78 mOhm @ 20A, 15V
Vgs(th) (Max) @ Id : 3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 15V
Vgs (Max) : +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 600V
FET Feature : -
Power Dissipation (Max) : 113.5W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : -
Supplier Device Package : TO-247-4L
Package / Case : TO-247-4
Packaging : Tube
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 78 mOhm @ 20A, 15V
Vgs(th) (Max) @ Id : 3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 15V
Vgs (Max) : +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 600V
FET Feature : -
Power Dissipation (Max) : 113.5W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : -
Supplier Device Package : TO-247-4L
Package / Case : TO-247-4
0
100 in stock
C3M0075120J
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Bulk
Alternate Packaging
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 90 mOhm @ 20A, 15V
Vgs(th) (Max) @ Id : 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 51nC @ 15V
Vgs (Max) : +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 113.6W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK-7
Package / Case : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging : Bulk
Alternate Packaging
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 90 mOhm @ 20A, 15V
Vgs(th) (Max) @ Id : 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 51nC @ 15V
Vgs (Max) : +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 113.6W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK-7
Package / Case : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
0
100 in stock
C3M0075120K
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 90 mOhm @ 20A, 15V
Vgs(th) (Max) @ Id : 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 51nC @ 15V
Vgs (Max) : +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 113.6W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-4L
Package / Case : TO-247-4
Packaging : Tube
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 90 mOhm @ 20A, 15V
Vgs(th) (Max) @ Id : 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 51nC @ 15V
Vgs (Max) : +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 113.6W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-4L
Package / Case : TO-247-4
0
100 in stock
C3M0120090D
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 155 mOhm @ 15A, 15V
Vgs(th) (Max) @ Id : 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 17.3nC @ 15V
Vgs (Max) : +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 600V
FET Feature : -
Power Dissipation (Max) : 97W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
Packaging : Tube
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 155 mOhm @ 15A, 15V
Vgs(th) (Max) @ Id : 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 17.3nC @ 15V
Vgs (Max) : +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 600V
FET Feature : -
Power Dissipation (Max) : 97W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
0
100 in stock
C3M0120090J
Cree Wolfspeed
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Alternate Packaging
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 155 mOhm @ 15A, 15V
Vgs(th) (Max) @ Id : 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 17.3nC @ 15V
Vgs (Max) : +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 600V
FET Feature : -
Power Dissipation (Max) : 83W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK-7
Package / Case : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging : Tube
Alternate Packaging
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 155 mOhm @ 15A, 15V
Vgs(th) (Max) @ Id : 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 17.3nC @ 15V
Vgs (Max) : +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 600V
FET Feature : -
Power Dissipation (Max) : 83W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK-7
Package / Case : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
0
100 in stock
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