Toshiba Semiconductor and Storage
- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
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Part Number
Manufacturer
Description
Unit Price
In Stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Series : -
Part Status : Active
Wavelength : 650nm
Spectral Bandwidth : -
Voltage - Forward (Vf) (Typ) : 1.8V
Current - DC Forward (If) (Max) : 30mA
Voltage - DC Reverse (Vr) (Max) : 5V
Capacitance : -
Connector Type : TOSLINK
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Series : -
Part Status : Active
Wavelength : 650nm
Spectral Bandwidth : -
Voltage - Forward (Vf) (Typ) : 1.8V
Current - DC Forward (If) (Max) : 30mA
Voltage - DC Reverse (Vr) (Max) : 5V
Capacitance : -
Connector Type : TOSLINK
0
167 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Series : -
Part Status : Active
Wavelength : 650nm
Spectral Bandwidth : -
Voltage - Forward (Vf) (Typ) : 1.75V
Current - DC Forward (If) (Max) : 30mA
Voltage - DC Reverse (Vr) (Max) : -
Capacitance : -
Connector Type : TOSLINK
0
73 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Series : -
Part Status : Active
Wavelength : 650nm
Spectral Bandwidth : -
Voltage - Forward (Vf) (Typ) : 1.75V
Current - DC Forward (If) (Max) : 30mA
Voltage - DC Reverse (Vr) (Max) : -
Capacitance : -
Connector Type : TOSLINK
0
81 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.2 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP
Package / Case : 8-SOIC (0.154", 3.90mm Width)
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 9.1 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 9.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 820pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP
Package / Case : 8-SOIC (0.154", 3.90mm Width)
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSIII-H
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 75 mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 4.4nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 251pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-6 (2.9x2.8)
Package / Case : SOT-23-6 Thin, TSOT-23-6
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSVI-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 60 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 4.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-6 (2.9x2.8)
Package / Case : SOT-23-6 Thin, TSOT-23-6
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSVI-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 81 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 4.7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-6 (2.9x2.8)
Package / Case : SOT-23-6 Thin, TSOT-23-6
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSVI-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 59 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-6 (2.9x2.8)
Package / Case : SOT-23-6 Thin, TSOT-23-6
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 20 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 640pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-6 (2.9x2.8)
Package / Case : SOT-23-6 Thin, TSOT-23-6
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 20 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 9nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 630pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-6 (2.9x2.8)
Package / Case : SOT-23-6 Thin, TSOT-23-6
0
100 in stock
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