Toshiba Semiconductor and Storage
- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
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Part Number
Manufacturer
Description
Unit Price
In Stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : *
Part Status : Obsolete
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-92MOD
Package / Case : TO-226-3, TO-92-3 Long Body
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : *
Part Status : Obsolete
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-92MOD
Package / Case : TO-226-3, TO-92-3 Long Body
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : *
Part Status : Obsolete
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-92MOD
Package / Case : TO-226-3, TO-92-3 Long Body
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : N-Channel
Frequency : 470MHz
Gain : 12dB
Voltage - Test : 4.5V
Current Rating : 1A
Noise Figure : -
Current - Test : 200mA
Power - Output : 32dBm
Voltage - Rated : 7.5V
Package / Case : TO-243AA
Supplier Device Package : SC-62
0
210 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5.8 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 196nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 12400pF @ 10V
FET Feature : -
Power Dissipation (Max) : 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220NIS
Package / Case : TO-220-3 Full Pack
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.7 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 550pF @ 25V
FET Feature : -
Power Dissipation (Max) : 35W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 330 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 4250pF @ 25V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(N)
Package / Case : TO-3P-3, SC-65-3
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 500 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 62nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3100pF @ 25V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : U-MOSIII
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 730pF @ 10V
FET Feature : -
Power Dissipation (Max) : 20W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PW-MOLD2
Package / Case : TO-251-3 Stub Leads, IPak
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 10V
FET Feature : -
Power Dissipation (Max) : 20W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PW-MOLD2
Package / Case : TO-251-3 Stub Leads, IPak
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : N-Channel
Frequency : 470MHz
Gain : 11.5dB
Voltage - Test : 6V
Current Rating : 3A
Noise Figure : -
Current - Test : 250mA
Power - Output : 36.5dBmW
Voltage - Rated : 12V
Package / Case : SC-70, SOT-323
Supplier Device Package : SC-70
0
913 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Voltage - Breakdown (V(BR)GSS) : -
Drain to Source Voltage (Vdss) : -
Current - Drain (Idss) @ Vds (Vgs=0) : 2.6mA @ 10V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 400mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds : 8.2pF @ 10V
Resistance - RDS(On) : -
Power - Max : 100mW
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
0
100 in stock
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