Global Power Technologies Group, Inc.
- Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.
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Part Number
Manufacturer
Description
Unit Price
In Stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Amp+™
Part Status : Discontinued at
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 29A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.9V @ 12A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 200µA @ 650V
Capacitance @ Vr, F : 632pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : TO-252-2
Operating Temperature - Junction : -55°C ~ 175°C
0
484 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tube
Series : Amp+™
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 20A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 20A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 40µA @ 1200V
Capacitance @ Vr, F : 1270pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220-2
Operating Temperature - Junction : -55°C ~ 175°C
0
442 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tube
Series : Amp+™
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 20A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 20A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 40µA @ 1200V
Capacitance @ Vr, F : 1270pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-247-2
Supplier Device Package : TO-247-2
Operating Temperature - Junction : -55°C ~ 175°C
0
403 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tube
Series : Amp+™
Part Status : Active
Diode Configuration : 1 Pair Common Cathode
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) (per Diode) : 50A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 15A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 30µA @ 1200V
Operating Temperature - Junction : -55°C ~ 175°C
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247-3
0
96 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 360pF @ 25V
FET Feature : -
Power Dissipation (Max) : 52.1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 360pF @ 25V
FET Feature : -
Power Dissipation (Max) : 17.3W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220F
Package / Case : TO-220-3 Full Pack
0
100 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 360pF @ 25V
FET Feature : -
Power Dissipation (Max) : 52.1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
100 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 360pF @ 25V
FET Feature : -
Power Dissipation (Max) : 52.1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I-PAK
Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
0
100 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.6 Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.5nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 353pF @ 25V
FET Feature : -
Power Dissipation (Max) : 52W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.6 Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.5nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 353pF @ 25V
FET Feature : -
Power Dissipation (Max) : 17.3W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220F
Package / Case : TO-220-3 Full Pack
0
100 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.6 Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.5nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 353pF @ 25V
FET Feature : -
Power Dissipation (Max) : 52W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
100 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.6 Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.5nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 353pF @ 25V
FET Feature : -
Power Dissipation (Max) : 52W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I-PAK
Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
0
100 in stock
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