PI ultra fast Qspeed H series diode can replace silicon carbide components

PI's ultra fast Qspeed H series diodes can now achieve voltage and current ratings of up to 650V and 30A. These high-power devices have the industry's lowest silicon diode reverse recovery charge (Qrr). They are an ideal substitute for silicon carbide (SiC) diodes, providing comparable efficiency and voltage derating performance, while also having the price advantage and supply guarantee of silicon diodes.
The new diode design is designed to meet the increasing power requirements of modern applications and is suitable for continuous conduction mode (CCM) PFC boost applications ranging from 1.6kW to 11kW. In servers, telecommunications, network equipment, and industrial power supplies that use high-power CPUs and GPUs, they can easily meet 80% of the breakdown voltage derating requirements.
The reverse recovery charge of 650V Qspeed diode is equivalent to that of SiC diode, so the system efficiency in 3.4kW battery charger application is almost the same as the latter. The hybrid PiN Schottky diode technology enables it to have soft reverse recovery current characteristics, which can reduce EMI and peak reverse voltage stress without the need for buffers.
The new Qspeed diode adopts the industry standard TO-220AC package, with insulation capacity of 2.5kV and excellent thermal conductivity. They can be directly used to replace SiC diodes with equivalent performance.