E3M0120090D
E3M0120090D
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : Automotive, AEC-Q101, E
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 155 mOhm @ 15A, 15V
Vgs(th) (Max) @ Id : 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 17.3nC @ 15V
Vgs (Max) : +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 600V
FET Feature : -
Power Dissipation (Max) : 97W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
Availability: 100 in stock
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