C2M1000170D
C2M1000170D
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : Z-FET™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 1.1 Ohm @ 2A, 20V
Vgs(th) (Max) @ Id : 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 13nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 191pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 69W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
Availability: 100 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
