C2M0080170P
C2M0080170P
Manufacturer : Cree/Wolfspeed
Packaging : Tube
Series : C2M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 125 mOhm @ 28A, 20V
Vgs(th) (Max) @ Id : 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 120nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 2250pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 277W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-4L
Package / Case : TO-247-4
Availability: 28 in stock
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